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Formation and Evolution of InAs Nanowires on an InP(001) Surface

Published online by Cambridge University Press:  10 February 2011

Haeyeon Yang ,
J. B. Smathers ,
P. Ballet ,
C. L. Workman  and
G. J. Salamo
Haeyeon Yang
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
J. B. Smathers
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
P. Ballet
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
C. L. Workman
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
G. J. Salamo
Affiliation:
Physics Department, University of Arkansas, Fayetteville, AR 72701
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Abstract

We have used in-situ scanning tunneling microscopy (STM) to study the formation and evolution of InAs islands on an InP (001) surface. The InAs islands are produced by (i) exchange of P-atoms with As-atoms or by (ii) direct deposition of In and As. In both cases InAs nanowires arem elongated along the [ī 10] direction with a length over 1 µm. We observe these nanowires to be stable under an arsenic environment while unstable with no arsenic flux, and eventually transform into a rectangular-based pyramid with a truncated top. These observations indicate that surface reconstruction can play a role in the selection of quantum wire or dot growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 141
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Saito, H., Nishi, K., Ogura, I. et al. , Appl. Phys. Lett. 69, p. 3140 (1996).Google Scholar
2 Li, H., Wu, J., Wang, Z. et al. , Appl. Phys. Lett. 75, p. 1173 (1999).Google Scholar
3 Wang, B., Zhao, F., Peng, Y. et al. , Appl. Phys. Lett. 72, p. 2433 (1998).Google Scholar
4 Taskinen, M., Sopanen, M., Lipsanen, H. et al. , Surf. Sci. 376, p. 60 (1997).Google Scholar
5 Yoon, S., Moon, Y., Lee, T.-W. et al. , Appl. Phys. Lett. 74, p. 2029 (1999).Google Scholar
6 Phaner, M.-Goutrobe, Robach, Y., Krapf, P. et al. , Surf. Sci 402–404, p. 268 (1998).Google Scholar
7 Thibado, P. M., Salamo, G. J., and Baharav, Y., J. Vac. ScL Technol. B 17, p. 253 (1999).Google Scholar
8 Yamaguchi, H. and Horikoshi, Y., Phys. Rev. B. 51, p. 9836 (1995).Google Scholar
9 Hollinger, G., Gallet, D., Gendry, M. et al. , J. Vac. Sci. Technol. B 8, p. 832 (1990).Google Scholar
10 Carlin, J. F., Houdre, R., Rudra, A. et al. , Appl. Phys. Lett. 59, p. 3018 (1991).Google Scholar