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The Formation and Annealing of Amorphous Layers of Al2O3

Published online by Cambridge University Press:  28 February 2011

G. C. Farlow ,
P. S. Sklad ,
C. W. White ,
C. J. McHargue  and
B. R. Appleton
G. C. Farlow
Affiliation:
Wright State University, Dayton, OH
P. S. Sklad
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Metals and Ceramics Divison, ORNL
C. W. White
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Solid State Division, ORNL
C. J. McHargue
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Metals and Ceramics Divison, ORNL
B. R. Appleton
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN Solid State Division, ORNL
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Abstract

The critical dose for formation of an amorphous layer of Al2O3 by ion irradiation at 77 K has been determined. It is found to lie between 2 and 3 × 1015/cm2 if the sample is irradiated near the <0001> axis of the substrate and is found to lie in the neighborhood of 2 × 1016/cm2 if the irradiation is near the <1210> axis. The amorphous layers are found to recrystallize epitaxially if annealed at 1190 degrees C and to form a metastable microstructure upon annealing at 800 degrees C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 60: Symposium L – Defect Properties and Processing of High-Technology Nonmetallic Materials , 1985 , 387
Copyright
Copyright © Materials Research Society 1986

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