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Forkation and Oxidation of Titanium Silicide

Published online by Cambridge University Press:  26 February 2011

Tzuen-Luh Huang  and
Shuit-Tong Lee
Tzuen-Luh Huang
Affiliation:
Electronic Research Laboratories - Photographic Products Group, Eastman Kodak Company, Rochester, New York 14650
Shuit-Tong Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, New York 14650
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Abstract

Refractory metal suicides have been used widely in VLSI fabrication, owing to their low resistivity, high-temperature compatibility, and oxidiz-ability. In this work, we have studied the titanium suicide formation, using a rapid thermal processor (RTP). Isothermal and isochronal sintering experiments were carried out to determine the appropriate process steps. The selective etch of the unreacted Ti was characterized. The sintered films were characterized by four-point probe, X-ray diffraction, and Auger electron spectroscopy. We also studied the oxidation at 800–1000°C of Ti suicide formed by sintering Ti and polycrystalline silicon using a RTP in N2 ambient. The oxidation results of Ti suicide formed using RTP in N2 ambient are compared with those formed using furnace sintering in vacuum/argon ambient and those deposited by cosputtering.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 339
Copyright
Copyright © Materials Research Society 1987

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References

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