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Fluorine-Enhanced Si:Er Light Emission

Published online by Cambridge University Press:  22 February 2011

F.Y.G. Ren ,
J. Michel ,
D.C. Jacobson ,
J.M. Poate  and
L.C. Kimerling
F.Y.G. Ren
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
J. Michel
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
D.C. Jacobson
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J.M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L.C. Kimerling
Affiliation:
MIT, Department of Materials Science and Engineering, Cambridge, MA 02139
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Abstract

An erbium-fluorine complex is 100 times more effective than an erbium-oxygen complex in generating light emission at 1.54 µm in Si:Er. The luminescence light intensity is linearly proportional to the total retained F atoms in Si after heat treatment. F enhancement in light emission in Si:Er is eventually limited by the damage associated with high dose F implantation. The optimum annealing temperature to achieve the maximum intensity is found to decrease slightly from 1000ºC to 800ºC as the initial F implanted concentration increases. The Si:Er heat treatment process and the optimum processing window are determined by the interaction of three different processes: damage recovery/complex formation, F out-diffusion and Er-F complex dissociation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 316: Symposium A – Materials Synthesis and Processing Using Ion Beams , 1993 , 493
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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