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Fluorinated Silicon Nitride Film Deposited at Low Temperatures from SiH4-SiF4-NH3

Published online by Cambridge University Press:  10 February 2011

Y.-B. Park ,
S. Rhee ,
J.-H. Choi ,
C.-W. Kimb  and
J.H. Suok
Y.-B. Park
Affiliation:
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea LCD R&D Group II, AMLCD Division, Samsung Electronics Co. Ltd., Kiheung, 449-900, Korea
S. Rhee
Affiliation:
Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, 790-784, Korea
J.-H. Choi
Affiliation:
LCD R&D Group II, AMLCD Division, Samsung Electronics Co. Ltd., Kiheung, 449-900, Korea
C.-W. Kimb
Affiliation:
LCD R&D Group II, AMLCD Division, Samsung Electronics Co. Ltd., Kiheung, 449-900, Korea
J.H. Suok
Affiliation:
LCD R&D Group II, AMLCD Division, Samsung Electronics Co. Ltd., Kiheung, 449-900, Korea
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Abstract

The effect of SiF4 addition on the deposition characteristics and film property has been studied for the improvement of long term stability of the SiNx:F film in TFT applications. During the deposition with SiF4 addition, atomic hydrogen species in the gas phase significantly decreased. A detailed bonding configuration of fluorine and hydrogen was investigated by XPS and FT-IR. Optical band gap increases with the increment of fluorine concentration in the film. High compressible stress turned to low tensile stress with increasing SiF4 flow rate. The breakdown strength and barrier height for the conduction of trapped electron were improved by SiF4 addition even in Si-rich SiNx:H films due to the stable Si-F bond formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 471
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Parson, G.N., Souk, J.H. and Batey, J., J. Appl. Phys., 70, 1553 (1991)Google Scholar
2 Lustig, N. and Kanicki, J., J. Appl. Phys., 65, 3951 (1989)Google Scholar
3 Fujita, S., Toyoshima, H., Ohishi, T. and Sasaki, A., J. Appl. Phys., 57, 426 (1985)Google Scholar
4 Livengood, R.E and Hess, D.W., J. Appl. Phys., 63, 2651 (1988)Google Scholar
5 Pai, C.S. et al. , J. Appl. Phys., 68, 2442 (1990)Google Scholar
6 Livengood, R.E and Hess, D.W., Appl. Phys. Lett., 50, 560 (1987)Google Scholar
7 Smith, D. et al. , J. Vac. Sci. Technol., A11, 1843 (1993)Google Scholar
8 Mitsuya, M., Appl. Phys. Lett., 70, 961 (1997)Google Scholar
9 Abeles, B., Yang, L., Persons, P.D., Stasiswski, H.S. and Landford, W.A., Appl. Phys. Left., 48, 168 (1986)Google Scholar
10 Lucovsky, G., Solid State Technol., 29, 571 (1979)Google Scholar
11 Robertson, J., Philos. Mag., B 69, 307 (1994)Google Scholar
12 Sinha, A.K. et al. , J. Appl. Phys., 49, 2756 (1978)Google Scholar