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Floating-Gate Ion Sensitive Field-Effect Transistor for Chemical and Biological Sensing

Published online by Cambridge University Press:  01 February 2011

Ben Zhao ,
Tsunehiro Sai ,
Arifur Rahman  and
Kalle Levon
Ben Zhao
Affiliation:
Department of Electrical and Computer Engineering, Polytechnic University, Brooklyn, NY
Tsunehiro Sai
Affiliation:
Othmer Department of Chemical and Biological Science and Engineering, Polytechnic University, Brooklyn, NY
Arifur Rahman
Affiliation:
Xilinx Research Labs, Xilinx, Inc, San Jose, CA
Kalle Levon
Affiliation:
Othmer Department of Chemical and Biological Science and Engineering, Polytechnic University, Brooklyn, NY
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Abstract

This paper presents the use of Floating-Gate Ion Sensitive Field-Effect Transistor (FGISFET) as a real-time chemical and biological sensor. The structure of FGISFET is similar to that of an electrically erasable programmable read-only memory (EEPROM). The floating-gate of a FGISFET is connected to an exposed metallic structure, which serves as a probe for detecting ionic activities. By applying ion-sensitive chemical and biological materials to the floating gate, its threshold voltage can be modulated in the presence of selective chemical or biological targets. As a demonstration, FGISFETs have been fabricated in 1.2 μm process technology available through MOSIS [1]. Our preliminary measurements confirmed the basic design and operation of FGISFET, and using doped aniline trimer (TANI) as a sensing material, we were able to sense 70ppm of ammonium gas.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 828: Symposium A – Semiconductor Materials for Sensing , 2004 , A7.8
Copyright
Copyright © Materials Research Society 2005

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References

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