Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-24T21:12:41.571Z Has data issue: false hasContentIssue false
  • English
  • Français

Flexible a-Si:H-based Image Sensors Fabricated by Digital Lithography

Published online by Cambridge University Press:  01 February 2011

William S. Wong ,
TseNga Ng ,
Michael L. Chabinyc ,
Rene A. Lujan ,
Raj B. Apte ,
Sanjiv Sambandan ,
Scott Limb  and
Robert A. Street
William S. Wong
Affiliation:
wsw@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States, 650-812-4660, 650-812-4105
TseNga Ng
Affiliation:
tnng@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Michael L. Chabinyc
Affiliation:
mchabiny@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Rene A. Lujan
Affiliation:
lujan@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Raj B. Apte
Affiliation:
apte@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Sanjiv Sambandan
Affiliation:
sambandan@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Scott Limb
Affiliation:
slimb@parc.com, Palo Alto Research Center, Hardware Systems Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Robert A. Street
Affiliation:
street@parc.com, Palo Alto Research Center, Electronic Materials and Devices Lab, 3333 Coyote Hill Road, Palo Alto, CA, 94304, United States
Get access

Abstract

Amorphous silicon-based x-ray image sensor arrays were fabricated on poly-ethylene naphthalate substrates at process temperatures below 180°C. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. The sensor devices were found to be comparable to high-temperature processed devices. The integration of the sensor stack, TFT array and PEN substrate resulted in a flexible x-ray image sensor with 180×180 pixels with 75 dpi resolution.

Keywords

thin filmsensorSi
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A09-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Street, R. A., Large Area Image Sensor Arrays, Technology and Applications of Amorphous Silicon, Street, R.A. (Ed.), pp. 147–221 (Springer-Verlag, 2000).Google Scholar
2 Suo, Z., Ma, E.Y., Gleskova, H., and Wagner, S., Appl. Phys. Lett. 74, 1177 (1999).Google Scholar
3 Kroon, M. A. and Swaaija, R. A. C. M. M. van, J. Appl Phys. 90, 994 (2001).Google Scholar
4 Wong, W.S., Ready, S., Matusiak, R., White, S.D., Lu, J.-P., Ho, J., Street, R.A., Appl. Phys. Lett. 80, 610–12 (2002).Google Scholar
5 Wong, W.S., Ready, S.E., Lu, J.-P., Street, R.A., IEEE Electron Dev. Lett. 24, 577 (2003).Google Scholar