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The Finite Size Effect on The Metal-Insulator Transition of VO2 Films Grown by MOCVD

Published online by Cambridge University Press:  21 February 2011

Hyung Kook Kim ,
R. P. Chiarello ,
Hoydoo You ,
M. H. L. Chang ,
T. J. Zhang  and
D. J. LAM
Hyung Kook Kim
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
R. P. Chiarello
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
Hoydoo You
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
M. H. L. Chang
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
T. J. Zhang
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
D. J. LAM
Affiliation:
Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439–4837
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Abstract

We studied the finite size effect on the metal-insulator phase transition and the accompanying tetragonal to monoclinic structural phase transition of VO2 films grown by MOCVD. X-ray diffraction measurements and electrical conductivity measurements were done as a function of temperature for VO2 films with out-of plane particle size ranging from 60–310Å. Each VO2 film was grown on a thin TiO2 buffer layer, which in turn was grown by MOCVD on a polished sapphire (1120) substrate. The transition was found to be first order. As the out-of plane particle size becomes larger, the transition temperature shifts and the transition width narrows. For the 60Å film the transition was observed at ∼61°C with a transition width of ∼10°C, while for the 310Å film the transition temperature was ∼59°C and the transition width ∼2°C. We also observed thermal hysteresis for each film, which became smaller with increasing particle size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 237: Symposium Ca – Interface Dynamics and Growth , 1991 , 417
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

1. For example, Feinleib, Julius and Paul, William, Phys. Rev. 155, 841 (1967);CrossRefGoogle Scholar
Adler, David, Feinleib, Julius, Brooks, Harvey and Paul, William, Phys. Rev. 155, 851 (1967);CrossRefGoogle Scholar
Adler, David and Brooks, Harvey, Phys. Rev. 155, 826 (1967);CrossRefGoogle Scholar
Gupta, M., Freeman, A. J. and Ellis, D. E., Phys. Rev. B 16, 3338 (1977);CrossRefGoogle Scholar
Gervais, F. and Press, W., Phys. Rev. B 31, 4809 (1985).CrossRefGoogle Scholar
2. Morin, F. J., Phys. Rev. Lett. 3, 34 (1959);CrossRefGoogle Scholar
Shin, S. et. al., Phys. Rev. B 41, 4993 (1990) and references therein.CrossRefGoogle Scholar
3. Shapiro, S. M., Axe, J. D., Shirane, G. and Raccah, P. M., Solid Phys. Rev. B 13, 2965 (1976).Google Scholar
4. Terauchi, H. and Cohen, J. B., Phys. Rev. B 17, 2494 (1978);CrossRefGoogle Scholar
McWhan, D. B., et. al., Phys. Rev. B 10, 490 (1974);CrossRefGoogle Scholar
Anderson, G., Acta Chem. Scand. 8, 1599 (1954).CrossRefGoogle Scholar
5. Chang, H. L. M., et. al., submitted to J. Mat. Res., and references therein.Google Scholar
6. Kazuno, E., Theil, J. A. and Thornton, John A., J. Vac. Sci. Technol. A 6, 1663 (1988) and references therein.Google Scholar
7. Binder, Kurt, Rep. Prog. Phys. 50, 783 (1987) and references therein.CrossRefGoogle Scholar
8. Chang, H. L. M. et. al., EUROCVD Eighth Meeting (1991) and references therein.Google Scholar
9. Kim, H.K., et. al., to be published.Google Scholar
10. Warren, B. E., “X-ray Diffraction” (Dover, 1990).Google Scholar
11. Babkin, E. V., et al., Thin Solid Films 150, 15 (1987).CrossRefGoogle Scholar