Hostname: page-component-848d4c4894-2xdlg Total loading time: 0 Render date: 2024-06-27T16:01:14.410Z Has data issue: false hasContentIssue false
  • English
  • Français

Finite Element Calculations of Thermal Stresses in Passivated and Unpassivated Lines Bonded to Substrates

Published online by Cambridge University Press:  16 February 2011

Anne I. Sautera  and
W. D. Nix
Anne I. Sautera
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
W. D. Nix
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
Get access

Abstract

Thermal stresses in passivated and unpassivated aluminum lines bonded to substrates have been calculated using the MARC finite element code. Stresses in the unpassivated lines increase with increasing line width, with increasing substrate rigidity, and with decreasing distance from the substrate. Edge effects become significant for small line widths. Stresses in passivated lines increase with decreasing aspect ratio, with increasing passivation thickness, and with increasing Young's modulus of the passivation. Allowing plastic deformation to occur in the lines homogenizes and reduces the stresses. The calculated stresses in passivated lines are compared to recent measurements of stresses in encapsulated aluminum lines. The measured values are about a factor of four smaller than the calculated stresses, indicating that some deformation process besides plasticity, such as voiding or cracking, must have occurred to relieve the stresses.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 188: Symposium K – Thin Films: Stresses and Mechanical Properties II , 1990 , 15
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Flinn, P.A., Gardner, D.S. and Nix, W.D., IEEE Trans. Elec. Dev., ED–34, 689 (1987).Google Scholar
2. Doemer, M.F. and Nix, W.D., CRC Critical Reviews of Solid State and Materials Sciences, 14, 225 (1988).Google Scholar
3. Jones, R.E. Jr., Proc. IEEE IRPS, 25, 9 (1987).Google Scholar
4. Groothuis, S.K. and Schroen, W.H., Proc. IEEE IRPS, 25, 1 (1987).Google Scholar
5. MARC finite element program, MARC Analysis Research Corporation, Palo Alto, CA (1988).Google Scholar
6. MENTAT program, MARC Software International, Inc., Palo Alto, CA (1987).Google Scholar
7. Doerner, M.F., Ph.D. Dissertation, Stanford University, p. 122 (1987).Google Scholar
8. Brantley, W.A., J. Appl. Phys., 44, 534 (1973).Google Scholar
9. Blech, I.A. and Levi, A.A., J. Appl. Mech., 48, 442 (1981).Google Scholar
10. Flinn, P.A. and Chiang, C., J. Appl. Phys., 67, 2927 (1990).Google Scholar