Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-06-26T00:33:53.437Z Has data issue: false hasContentIssue false
  • English
  • Français

Finite Element Analysis of a MOCVD Reactor Having a Close-Spaced Injector

Published online by Cambridge University Press:  10 February 2011

Yang Ren Sun ,
David W. Weyburne  and
Qing S. Paduano
Yang Ren Sun
Affiliation:
SunTech Associates, 209 Great Road, Acton MA 01720
David W. Weyburne
Affiliation:
US Air Force Research Laboratory/SNHX, 80 Scott Drive, Hanscom AFB, MA 01731
Qing S. Paduano
Affiliation:
Tufts University, Medford, MA 02155
Get access

Abstract

A 2-D axisymmetric finite element analysis has been performed on a vertical MOCVD reactor having a close-spaced water-cooled injector for which the gas is injected only 1.6 cm above the rotating disk. The analysis showed that the system has a much higher flow stability, in terms of suppression of unwanted thermally driven convection, than conventional reactors. In addition, the flow study has identified two kinds of flow recirculation, a purely thermally driven convection and a geometry assisted one. The former is initiated with gas flowing upward near the center of the disk circulating clockwise, the latter one is located near the chamber wall circulating counterclockwise. This result is important in interpreting experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 490: Symposium Q – Semiconductor Process & Device Performance Modeling , 1997 , 193
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Houtman, C., Graves, D. B. and Jensen, K. F., J. Electrochem. Soc., vol. 133, p. 961 (1986)Google Scholar
2 Evans, G. and Greif, R., Journal of Heat Transfer, vol. 109, p. 929 (1987).Google Scholar
3 Evans, G. and Greif, R., Numerical Heat Transfer, vol. 14, p. 373 (1988).Google Scholar
4 Patnaik, S. and Brown, R. A., J. Crystal Growth, vol. 96, p. 153 (1989).Google Scholar
5 Fotiadis, D. I., Kieda, S. and Jensen, K. F., J. Crystal Growth, vol. 102, p. 441 (1990).Google Scholar
6 Biber, C. R., Wang, C. A. and Motakef, S., J. Crystal Growth, vol. 123, p. 545 (1992).Google Scholar
7 Breiland, W. G. and Evans, G. H., J. Electrchem. Soc, vol. 138, p. 1806 (1991).Google Scholar
8 Weyburne, D. W. and Ahern, B. S., J. Crystal Growth, vol. 170, p. 77 (1997).Google Scholar
9 Joh, S. and Evans, G. H., Numerical Heat Trans. A, vol. 31, p. 867 (1997)Google Scholar
10 Ahern, B. S. and Weyburne, D. W., Disclosure Dated Sept. 1987, US Patent No. 5,252,366 issued 12 Oct. 1993.Google Scholar
11 Vernon, S. M., Colter, P. C., McNulty, D. D., Weyburne, D. W. and Ahern, B. S.. In: proc. 6th Int. Conf. On Indium Phosphide and Related Materials. Santa Barbara CA, IEEE, March 1994, p. 137.Google Scholar
12 Becker, M., “Heat Transfer, A Modern Approach”, Plenum Pub, October 1986.Google Scholar
13 Private conversation with Breiland, W. G..Google Scholar