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Ferromagnetism in undoped semiconductors

Published online by Cambridge University Press:  23 June 2011

Yandong Ma ,
Ying Dai  and
Baibiao Huang
Yandong Ma
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
Ying Dai*
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
Baibiao Huang
Affiliation:
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R.China
*
*E mail: daiy60@sdu.edu.cn
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Abstract

The so-called “d0” magnetism observed in semiconductors, which is not caused by partially filled d orbitals, has challenged our conventional understanding on the origin of magnetism. One class of semiconductor materials showing d0 ferromagnetism is undoped oxides and nitrides. Here, we review the ferromagnetic properties of undoped GaN and MgO based on our recent investigations. It is revealed that the room-temperature ferromagnetism originates from the anion dangling bonds associated with the surface cation-vacancies. And the magnetism of ferromagnetic coupling between the vacancy induced local magnetic moment by through-bond spin polarization in undoped semiconductors is reviewed according to our works.

Keywords

electronic structuredefectsmagnetic properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1370: Symposium YY – Computational Semiconductor Materials Science , 2011 , mrss11-1370-yy05-01
Copyright
Copyright © Materials Research Society 2011

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References

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