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Ferroelectricity in Strategically Synthesized Pb-free LiNbO3-type ZnSnO3 Nanostructure Arrayed Thick Films

Published online by Cambridge University Press:  24 February 2015

Anuja Datta ,
Devajyoti Mukherjee ,
Corisa Kons ,
Sarath Witanachchi  and
Pritish Mukherjee
Anuja Datta
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Devajyoti Mukherjee
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Corisa Kons
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Sarath Witanachchi
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
Pritish Mukherjee
Affiliation:
Florida Cluster for Advanced Smart Sensor Technologies & Department of Physics, University of South Florida, Tampa, Florida 33620, USA Center for Integrated Functional Materials & Department of Physics, University of South Florida, Tampa, Florida 33620, USA
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Abstract

We report the evidence of ferroelectricity from LN-type ZnSnO3 nanostructure arrayed thick films (10 - 20 µm) on Si with remanent polarization value as high as ≈ 30 µC/cm2 in nanowire arrays. A combined pulsed-laser deposition (PLD) technique and a solvothermal synthesis scheme was adopted to effectively synthesize the nanostructured samples assisted by conducting ZnO template-layers. The similar crystal symmetry and comparable lattice parameter between ZnO and LN-type ZnSnO3 facilitated the dense growth of high-quality ZnSnO3 nanostructure arrays in the form of one-dimensional vertical nanowires, nanorods and two-dimensional nanoflakes. The strategic synthesis method allowed controlled tunability of the morphology, crystallinity, and packing density of ZnSnO3 nanostructures, which in turn facilitated the measurement of ferroelectric (FE) properties using a simple sandwich-device geometry. Analyses of the FE properties in relation to the structures are presented and their potential for designing future Pb-free FE devices for non-volatile memory applications is discussed.

Keywords

chemical synthesisnanostructureferroelectric
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1729: Symposium M – Materials and Technology for Nonvolatile Memories , 2015 , pp. 105 - 110
Copyright
Copyright © Materials Research Society 2015 

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References

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