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FERROELECTRIC THIN FILM SYSTEM IN PACKAGE DEVICES WITH INTEGRATED CAPACITORS OF 100 nF/mm2 & BREAKDOWN VOLTAGES OF 90 V

Published online by Cambridge University Press:  01 February 2011

Mareike Klee ,
Wilco Keur ,
Ruediger Mauczok ,
Aarnoud Roest ,
Klaus Reimann ,
Linda Peters ,
Kai Neumann  and
Rainer Kiewitt
Mareike Klee
Affiliation:
mareike.klee@philips.com, Philips Research Eindhoven, Group System in Package, HighTech Campus 3, Eindhoven, N/A, Netherlands
Wilco Keur
Affiliation:
wilco.keur@philips.com, Philips Research Eindhoven, HighTech Campus 4, Eindhoven, 5656AE, Netherlands
Ruediger Mauczok
Affiliation:
ruediger.mauczok@philips.com, Philips Research Eindhoven, HighTech Campus 4, Eindhoven, 5656AE, Netherlands
Aarnoud Roest
Affiliation:
aarnoud.roest@nxp.com, NXP Semiconductors / Corporate I&T / Research, Eindhoven, 5656AE, Netherlands
Klaus Reimann
Affiliation:
klaus.reimann@nxp.com, NXP Semiconductors / Corporate I&T / Research, Eindhoven, 5656AE, Netherlands
Linda Peters
Affiliation:
linda.peters@nxp.com, NXP Semiconductors / Corporate I&T / Research, Eindhoven, 5656AE, Netherlands
Kai Neumann
Affiliation:
kai.neumann@nxp.com, NXP Semiconductors, Hamburg, 22529, Netherlands
Rainer Kiewitt
Affiliation:
rainer.kiewitt@philips.com, Philips Research Aachen, Aachen, 52066, Germany
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Abstract

Thin film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 and breakdown voltages of up to 90 V have been achieved. The integration of these high density capacitors with extremely high breakdown voltage is a revolution in the world of integrated passive components and has not yet been achieved in any other passive integration technology.

Keywords

ferroelectricthin filmmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1034 , 2007 , 1034-K11-08
Copyright
Copyright © Materials Research Society 2008

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