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Ferroelectric Domain Inversion in LiNbO3 and its Application to High-Precision Piezoelectric Actuators

Published online by Cambridge University Press:  16 February 2011

Kiyoshi Nakamura  and
Ken Yamada
Kiyoshi Nakamura
Affiliation:
Faculty of Engineering, Tohoku University, Sendai 980, Japan
Ken Yamada
Affiliation:
Faculty of Engineering, Tohoku University, Sendai 980, Japan
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Abstract

Heat treatment of bare single-domain LiNbO3 plates near the Curie temperature induces a local polarization reversal, thereby yielding a ferroelectric inversion layer. For a sufficiently long heat treatment the inversion layer thickness becomes equal to one half of the plate thickness. Similar domain inversion is also induced by heat treatment of protonexchanged LiTaO3. These domain inversion phenomena and a model for explaining the mechanism are reviewed.

The inversion layer has piezoelectric constants opposite in sign to those of the uninveiled domain. Therefore, a LiNbO3 plate with such an inversion layer can be used as a piezoelectric actuator similar to the bimorph, because bending motion or torsional motion can be piezoelectrically produced, depending on the plate orientation. The measured characteristics of these actuators are presented and demonstrated to exhibit excellent linearity and no hysteresis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 360 , 1994 , 21
Copyright
Copyright © Materials Research Society 1995

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References

1.Nassau, K., Levinstein, H.J. and Loiacono, G.M., J.Phys.Chem.Solids 27, 983 (1966).Google Scholar
2.Rauber, A, in Current Topics in Materials Science, edited by Kaldis, (North Holland, Amsterdam, 1978) Vol. 1, p.481.Google Scholar
3.Ohnishi, N., Jpn.J.Appl.Phys. 16, 1069 (1977).Google Scholar
4.Nakamura, K., Ando, H. and Shimizu, H., Proc. 15th EM Symp.(1986) p.29[in Japanese].Google Scholar
5.Nakamura, K., Ando, H. and Shimizu, H., Proc. 1986 IEEE Ultrason.Symp. (1986) p.719.Google Scholar
6.Nakamura, K., Ando, H. and Shimizu, H., Appl.Phys.Lett. 50, 1413 (1987).Google Scholar
7.Nakamura, K., Ando, H., Hosoya, M. and Shimizu, H., Tech.Rep.IEICE Jpn., US87-37 (1987) [in Japanese].Google Scholar
8.Nakamura, K. and Shimizu, H., Proc. 1989 IEEE Ultrason. Symp., p.309.Google Scholar
9.Nakamura, K. and Shimizu, H., Appl. Phys.Lett. 56, 1535 (1990).Google Scholar
10.Nakamura, K., Jpn.J.Appl.Phys. 31, Suppl.31-1,9 (1992).Google Scholar
11.Nakamura, K. and Shimizu, H., Ferroelectrics 93, 211 (1989).Google Scholar
12.Nakamura, K., Nakamura, T. and Yamada, K., Jpn.J.Appl. Phys. 32, 2415 (1993).Google Scholar
13.Jackel, J.L., Ramaswamy, V. and Lyman, S.P., Appl.Phys.Lett. 38, 509 (1981).Google Scholar
14.Nakamura, K., ishikawa, K. and Kawai, T., Proc. 8th Meeting of Ferroelectric Materials and Their Applications (1991) p. 107[in Japanese].Google Scholar
15.Webjom, J., Laurell, F. and Arvidsson, G., Lightwave, J.Technol. 7, 1597 (1989).Google Scholar
16.Nakamura, K. and Ishikawa, K., 1990 Tohoku-Section Joint Convension Record of Institutes of Electrical and Information Engineers Jpn.(1990) p.69[in Japanese]Google Scholar
17.Isobe, C., Taneyama, Y. and Saitoh, M., Proc.51st Autumn Meeting of Jpn. Society of Applied Physics (1990) p.925 [in Japanese].Google Scholar
18.Jackel, J.L., Rice, C.E. and Veselka, J.J.: Appl.Phys.Lett. 41, 607 (1982).Google Scholar
19.Mizuuchi, K., Yamamoto, K. and Taniuchi, T.: Appl.Phys.Lett. 58,2732 (1991).Google Scholar
20.Tourlog, Ailie and Nakamura, K., Tech.Rep.IEICE Jpn., US91-49 (1991)[in Japanese].Google Scholar
21.Nakamura, K., Hosoya, M. and Tourlog, A., J.Appl.Phys. 73, 1390 (1993).Google Scholar
22.Nakamura, K., Ando, H. and Shimizu, H., Jpn.J.Appl.Phys. 26, Suppl.26-2, 198 (1987).Google Scholar
23.Warner, A.W., Onoe, M. and Coquin, G.A., J.Acoust. Soc. Am. 42, 1223 (1967).Google Scholar
24.Ueda, M., Sawada, H., Tanaka, A. and Wakatuki, N., Proc.1990 IEEE Ultrason. Symp. (1990) p. 1183.Google Scholar
25.Suzuki, T., J.Acoust.Soc.Jpn. 27, 87 (1971)[in Japanese].Google Scholar