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Ferroelectric Behavior of Li-Doped ZnO Thin Films on Si(100) by Pulsed Laser Deposition

Published online by Cambridge University Press:  10 February 2011

M. Joseph ,
H. Tabata  and
T. Tkawai
M. Joseph
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
H. Tabata
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
T. Tkawai
Affiliation:
Institute for Scientific and Industrial Research, Osaka university, 8-1, Mihogaoka, Ibaraki, Osaka 567, Japan
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Abstract

Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17 and 0.3 have been prepared on Si(100) substrate for the first time by pulsed laser deposition. These films are characterized for their structural, surface morphology and ferroelectric nature. A memory window of 1.2V has been observed in capacitance-voltage measurement.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 541: Symposium O – Ferroelectric Thin Films VII , 1998 , 517
Copyright
Copyright © Materials Research Society 1999

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References

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