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Fermi-Level Effect and Junction Carrier Concentration Effect on Boron Distribution in GexSil−x/Si Heterostructures

Published online by Cambridge University Press:  10 February 2011

CHang-Ho Chen ,
Ulrich M. Gösele  and
Teh Y. Tan
CHang-Ho Chen
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
Ulrich M. Gösele
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
Teh Y. Tan
Affiliation:
Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC 27708-0300
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Abstract

Dopant segregation mechanism in general involves the chemical effect, the Fermi-level effect, and the effect of the junction carrier concentrations. Satisfactory fits of available B distribution profiles in GexSil−x/Si heterostructures have been obtained using such a model, but with the chemical effect not important. The Fermi-level effect determines the difference in the ionized B solubilities in GexSil−x and Si. The singly-positively charged crystal self-interstitials I+ governs the boron diffusion process. The junction carrier concentration affects the concentration of I+ and solubility of B in the region and hence controls B diffusion across the heterojunction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 275
Copyright
Copyright © Materials Research Society 1999

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References

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