Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-17T00:44:54.553Z Has data issue: false hasContentIssue false
  • English
  • Français

Fermi Level Pinning in Au Schottky Barriers on InGaP and InGaAlP

Published online by Cambridge University Press:  22 February 2011

V.A. Gorbyley ,
A.A. Chelniy ,
A.A. Chekalin ,
A.Y. Polyakov ,
S.J. Pearon ,
N.B. Smirnov ,
A.V. Gnorkov ,
B.M. Leiferov ,
E.V. Popova  and
V.A. Kusikov
...Show all authors
V.A. Gorbyley
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.A. Chelniy
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.A. Chekalin
Affiliation:
Sigma Plus Company, Vinogradov str., 8/75, Moscow, 117133, Russia
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
S.J. Pearon
Affiliation:
Materials Science Department, University of Florida, Heinz Hall, Gainsville, Florida, FL 32111, USA
N.B. Smirnov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.V. Gnorkov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
B.M. Leiferov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
E.V. Popova
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
V.A. Kusikov
Affiliation:
Institute of Rare Metals, B. Tolmachevsky, 5, Moscow, 109017, Russia
A.A. Balmashnov
Affiliation:
Russian Friendship University, Miklukho-Maklay str., 6, Moscow, 117198, Russia
Get access

Abstract

It is shown that in Au/InGaP and Au/InGaAlP Schottky diodes the Fermi level is pinned by metal-deposition-induced midgap states. Hydrogen plasma treatment of such diodes greatly improves the reverse currents. The measured Schottky barrier heights seem to correlate with the valence band offsets measured by DLTS on quantum well structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 265
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ishikawa, M., Suzuki, M., Nishikawa, Y., Ytaya, K., Hatakoshi, G., Kokubun, Y., Uematsu, Y., in Galliuum Arsenide and Related Compounds 1989, IOP Conf. Ser. 106, edited by Ikoma, T. and Watanabe, H. (IOP, Bristol, New York, 1989) pp 575–580 Google Scholar
2. Tanaka, T., Yanagisawa, H., Yano, S.-I., Minegawa, S., in Advanced III-V Compound Semiconductor Growth, Processing and Devices, edited by Pearton, S.J., Sadana, D.K. and Zavada, J.M. (Mater. Res. Soc. Proc. 240, Pittsburgh, PA, 1990) pp 253–258 Google Scholar
3. Polyakov, A.Y., Pakhomov, A.V., Tishkin, M.V. and Omeljanovsky, E.M., in Semi-Insulating III-V Materials 6, edited by Milnes, A.G. and Miner, C.J. (Adam Hilger, London and Bristol, 1990) pp 247–257 and references thereinGoogle Scholar
4. Gorbylev, V.A., Chelniy, A.A., Chekalin, A.A., Polyakov, A.Y., Pearton, S.J., Smirnov, N.B., Govorkov, A.V., Leiferov, B.M., Popova, E.V., V.A Kusikov and Balmashnov, A.A., this volumeGoogle Scholar
5. Bhattacharya, P., Debbar, N. and Biswas, D., in Gallium Arsenide and Related Compounds 1989, IOP Conf. Ser. 106, edited by Ikoma, T. and Watanabe, H. (IOP, Bristol, New York, 1989) pp 351–356 Google Scholar
6. Herman, M.A., Semiconductor Superlattices (Akademie-Verlag, Berlin, 1986)Google Scholar
7. Balmashnov, A.A., Golovanivsky, K.S., Omeljanovsky, E.M., Pakhomov, A.V. and Polyakov, A.Y., Semicond. Sci. Technol. 5, 242(1990)Google Scholar
8. Tersoff, J., in Heterojunction Band Discontinuities, edited by Capasso, F. and Margaritondo, G. (North Holland, Amsterdam, 1987) pp 3–59 Google Scholar
9. Watanabe, M.O. and Ohba, Y., Appl. Phys. Lett. 50, 906(1987)Google Scholar
10. Liedenbaum, C.I.H.F., Vaister, A., Severens, A.L.G.J., Hooft, G.W.'t, Appl. Phys. Lett. 57, 2698(1990)Google Scholar