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Fast Redistribution of Boron Impurity in Si During Ion Irradiation

Published online by Cambridge University Press:  10 February 2011

A.N. Buzynin ,
A.E. Luk’yanov ,
V.V. Osiko  and
V.V. Voronkov
A.N. Buzynin
Affiliation:
General Physics Institute of RAS, 38 Vavilov Str., 117942 Moscow, Russia, mtourism@gamet.ru
A.E. Luk’yanov
Affiliation:
General Physics Institute of RAS, 38 Vavilov Str., 117942 Moscow, Russia, mtourism@gamet.ru
V.V. Osiko
Affiliation:
General Physics Institute of RAS, 38 Vavilov Str., 117942 Moscow, Russia, mtourism@gamet.ru
V.V. Voronkov
Affiliation:
Institute of Rare Metals, 5 Bolshoi Tolmachevski per., 109017, Moscow, Russia
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Abstract

The model of point defects-induced inversion of conductivity, formation and movement of the inverted p-n junction during Ar+ ions irradiation of p-Si crystals is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 510: Symposium D – Defect & Impurity Engineered Semiconductors & Devices II , January 1998 , 281
Copyright
Copyright © Materials Research Society 1998

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References

1. Buzynin, A.N., Luk'yanov, A.E., Osiko, V.V. and Voronkov, V.V.. (Mater. Res. Soc.Proc. 378, Pittsburg, PA 1995), p.653–658.Google Scholar
2. Voronkov, V.V., J.Crystal Growth 59, p.625 (1982)Google Scholar
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