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Fast Degradation with Pulsed Light of a-Si:H P-I-N Photodiodes
Published online by Cambridge University Press: 01 January 1993
Abstract
Amorphous Silicon p-i-nphotodiodes were obtained by PECVD in a reactor with a rotating substrate holder. Reverse currents as low as 5 × 10−11 A/cm2 at a bias of − 2V were measured using a guard ring electrode to minimize lateral edge currents. The devices were degraded by a Xenon flash lamp in open circuit conditions. The kinetics of the degradation process was evaluated by studying the long time dark current transient under reverse bias.
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- Copyright © Materials Research Society 1993