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A Fast And Efficient Simulation Tool For The Voltage Handling Capability Of High Voltage Devices

Published online by Cambridge University Press:  10 February 2011

E. Stefanov ,
G. Charitat ,
N. Nolhier  and
Ph. Spiesser
E. Stefanov
Affiliation:
LAAS – CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex 04, France
G. Charitat
Affiliation:
LAAS – CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex 04, France
N. Nolhier
Affiliation:
LAAS – CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex 04, France
Ph. Spiesser
Affiliation:
LAAS – CNRS, 7, Avenue Colonel Roche, 31077 Toulouse Cedex 04, France
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Abstract

The user-oriented simulator POWER2D for studying the voltage handling capability of power semiconductor devices is presented. The simulation is based on the Poisson's equation solution for an arbitrary shaped 1D, 2D, and cylindrical 3D high voltage semiconductor structures. Very fast solution of the potential is obtained for a high level of applied bias, based on incomplete LU decomposition preconditioned biconjugate gradient method, and combined with a multi-damping scheme for the Newton linearization of the non-linear algebraic equations. An original algorithm is developped ensuring a very fast and automatic search of the breakdown via the ionization integrals calculus. The predicting capability of the program is illustrated for different termination techniques showing good agreement with the experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 363
Copyright
Copyright © Materials Research Society 1998

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References

1. Atlas - User's Manual, Silvaco International, USA, October 1996.Google Scholar
2. Stefanov, E. and Charitat, G., POWER-2D – User's Guide, Rapport LAAS n°93306, (1993).Google Scholar
3. Nolhier, N., Stefanov, E., Charitat, G. and Rossel, P., COMPEL, 13, pp.771–783 (1994).Google Scholar
4. Stefanov, E., Charitat, G., Bailon, L. and Barbolla, J., MRS Fall Meeting, Session E 7.5, Boston, December 1997.Google Scholar
5. Varga, R., Matrix Iterative Analysis, Prentice Hall, Englewood Cliffs, NJ, 1962 Google Scholar
6. Koniges, A. and Anderson, D., Computer Physics Communications, 43, p. 297, (1987).Google Scholar
7. Rose, D. and Bank, R., Numerishe Mathematik, 37, pp.279–295, (1981).Google Scholar
8. Selberherr, S., Analysis and Simulation of semiconductor Devices, Springer Verlag, (1984).Google Scholar
9. Overstraeten, R. Van and Man, H. De, Solid-St. Electron., 13, pp.583–608, (1970).Google Scholar
10. Mingues, C., « Modélisation et realisation de terminaisons de jonctions haute tensions »,These de doctorat, Universitd Paul Sabatier, December 1997.Google Scholar
11. Comu, J., IEEE Trans. on Electron Dev., ED-20, pp.347–352 (1979).Google Scholar
12. Charitat, G., Jaume, D., Peyre-Lavigne, A., Rossel, P., IEDM'90, December 1990.Google Scholar