Hostname: page-component-77c89778f8-m42fx Total loading time: 0 Render date: 2024-07-18T23:39:28.518Z Has data issue: false hasContentIssue false

Failure of the Frenkel Defect Model to Explain the Trend in Anionic Conductivity in the MF2 Fluorite Structure and Related MSnF4 Materials

Published online by Cambridge University Press:  16 February 2011

Georges Denes*
Affiliation:
Concordia University, Laboratory of Solid State Chemistry and Mössbauer Spectroscopy, Laboratories for Inorganic Materials, Department of Chemistry and Biochemistry, 1455 De Maisonneuve Blvd. W., Montreal, Quebec, H3G 1 M8, Canada
Get access

Abstract

The high fluoride ion conductivity of fluorite type MF2 has been attributed tothe fact that half of the F8 cubes present in this structure are empty and therefore, are potential vacant sites for interstitial fluoride ions in the formation of Frenkel defects. However, the model of long range ion motion through Frenkel defects by use of empty F8 cubes is in contradiction with: (i) the little difference between the conductivities of CaF2 and BaF2, (ii) the conductivity of β-PbF2 being much larger than that of BaF2, and (iii) the much higher performance of MSnF4 even though there is no empty cube to form Frenkel defects in the MSnF4 structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schoonman, J., Solid State Ionics 1, 121 (1980).Google Scholar
2. Chadwick, A.V., Solid State ionics 8, 209 (1983).Google Scholar
3. Shapiro, S.M. and Reidinger, F., in Physics of Superionic Conductors, edited by Salamon, M.B. (Springer, Berlin, 1979), p. 45.Google Scholar
4. Dickens, M.H., Hayes, W., Smith, C. and Hutchings, M.T., in Fast Ion Transport in Solids, edited by Vashishta, P., Mundy, J.N. and Shenoy, G.K. (North-Holland, Amsterdam, 1979), p. 225.Google Scholar
5. Koto, K., Schultz, H. and Huggins, R.A., Solid State Ionics 1, 355 (1980); 3/4, 381 (1981).Google Scholar
6. Lucat, C., Rhandour, A., Reau, J.M., Portier, J. and Hagenmuller, P., J. Solid State Chem. 29, 373 (1979).Google Scholar
7. Denes, G., Birchall, T., Sayer, M. and Bell, M.F., Solid State Ionics 13, 213 (1984).Google Scholar
8. Wyckoff, R.W.G., Crystal Structures, 2nd ed., Vol. 1 (Interscience Publishers, New York, 1963), pp. 239244.Google Scholar
9. Denes, G., Pannetier, J. and Lucas, J., C. R. Acad. Sc. Paris, Series C 280, 831 (1975).Google Scholar
10. Pannetier, J., Denes, G. and Lucas, J., Mat. Res. Bull. 14, 627 (1979).Google Scholar
11. Birchall, T., Denes, G., Ruebenbauer, K. and Pannetier, J., Hyperfine Interact. 29, 1331 (1986).Google Scholar
12. Denes, G., Yu, Y.H., Tyliszczak, T. and Hitchcock, A.P., J. Solid State Chem. 91, 1 (1991).Google Scholar
13. Ansel, D., Debuigne, J., Denes, G., Pannetier, J. and Lucas, J., Ber. Bunsenges. Phys. Chem. 82, 376 (1978).Google Scholar
14. Denes, G., in Proceedings of the Second Nassau Mossbauer Conference, edited by Wynter, C.I. and Alp, E.E. (W.C. Brown Publishers, 1994), pp. 109135.Google Scholar