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Fabrication of SiN-assisted 0.12um AlGaAs/InGaAs PHEMT and 60GHz-band MMICs for 60GHz WPAN system

Published online by Cambridge University Press:  26 February 2011

Hokyun Ahn ,
Jong-Won Lim ,
Hong-Gu Ji ,
Woo-Jin Chang ,
Jae-Kyoung Mun  and
Haecheon Kim
Hokyun Ahn
Affiliation:
hkahn@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of, 82-42-860-6135, 82-42-860-6183
Jong-Won Lim
Affiliation:
jwlim@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Hong-Gu Ji
Affiliation:
hkji@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Woo-Jin Chang
Affiliation:
wjchang@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Jae-Kyoung Mun
Affiliation:
jkmun@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
Haecheon Kim
Affiliation:
khc@etri.re.kr, Electronics and Telecommunications Research Institute, RF Circuit Group, IT Convergence and Components Laboratory, 161 Gajeong-dong, Daejeon, 305-350, Korea, Republic of
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Abstract

In this paper, the fabrication technology of SiN-assisted 0.12um double deck T-gate AlGaAs/InGaAs p-HEMT and 60GHz-bands MMICs for the high rate personal area network (WPAN) system was described. The effect of the gate shape such as the 1st-deck and the 2nd-deck gate head size on the DC and RF characteristics of the p-HEMT device and the device performance at the optimum gate head size were also presented. At 0.22um of the optimum 1st-deck gate head size and 1um of the 2nd-deck head size, the p-HEMT device with two finger gates of 0.12um length × 50um width shows an extrinsic transconductance of 529mS/mm and a threshold voltage of -1.19V. The cut-off frequency and the maximum frequency of oscillation were 94.7GHz and 189.1GHz, respectively. The gate shape of the p-HEMT device such as a gate head size is correlated to parasitic capacitances including Cgs which have effects on RF performances including a cut-off frequency (fT) and a maximum frequency of oscillation (fmax).

Keywords

III-Velectronic materiallithography (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 969: Symposium W – Heterogeneous Integration of Materials for Passive Components and Smart Systems , 2006 , 0969-W03-10
Copyright
Copyright © Materials Research Society 2007

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