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Fabrication of Novel TFT LCD Panels with High Aperture Ratio Using a-SiCO:H Films as a Passivation Layer

Published online by Cambridge University Press:  01 February 2011

W.S. Hong ,
K.W. Jung ,
B.K. Hwang ,
G. Cerny ,
S.H. Yang ,
J.H. Choi  and
K. Chung
W.S. Hong
Affiliation:
Dept. of Electronics Engineering, Sejong University, Seoul, Korea
K.W. Jung
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics, Yongin-city, Kyunggi-do, Korea
B.K. Hwang
Affiliation:
Electronic Industry & Advanced Materials Business, Dow Corning, Midland, MI, U.S.A.
G. Cerny
Affiliation:
Electronic Industry & Advanced Materials Business, Dow Corning, Midland, MI, U.S.A.
S.H. Yang
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics, Yongin-city, Kyunggi-do, Korea
J.H. Choi
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics, Yongin-city, Kyunggi-do, Korea
K. Chung
Affiliation:
R&D Team, AMLCD Division, Samsung Electronics, Yongin-city, Kyunggi-do, Korea
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Abstract

Fabrication of a novel TFT-LCD panel, using amorphous silicon oxycarbide (a-SiCO:H) films as a passivation layer, was successfully demonstrated for the first time. The a-SiCO:H low-k films were deposited using a standard PECVD (plasma-enhanced chemical vapor deposition) reactor from a gas mixture of trimethylsilane[Si(CH3)3H] and N2O. The resulting films have a dielectric constant between 2.7 and 3.5 and high optical transmittance in the range of visible light

The transfer characteristics of the TFT's having a-SiCO:H as a passivation layer were comparable with that of a conventional TFT with a PECVD-grown SiNx passivation layer. Stability of the resulting TFT was performed under prolonged bias conditions, and the source-drain current was fairly constant over the test period. The LCD panel with the a-SiCO:H passivation layer showed 30% higher brightness than that of the standard panel.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 762: Symposium A – Amorphous and Nanocrystalline Silicon-Based Films – 2003 , 2003 , A21.3
Copyright
Copyright © Materials Research Society 2003

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References

1. Kim, J.H. and Soh, H.S., AMLCD '97, pp.5 (1997)Google Scholar
2. Sakamoto, M., Ukita, T., Maeda, A. and Ohi, S., SID 96 Digest, pp.681 (1996)Google Scholar
3. Korczynski, E., Solid State Technology, pp. 43, May 1999.Google Scholar
4. Loboda, M.J., Seifferly, J.A., Grove, C.M. and Schneider, R.F., in Environmental, Safety and Health issues in IC Production, edited by Reif, R., Heyns, M., Bowling, A. and Tonti, A., (Mater. Res. Soc. Proc. 447 Pittsburg, PA 1997) pp.145–151 Google Scholar
5. Cerny, G., Dow Corning Internal Report, Nov. 2000.Google Scholar
6. Shi, J., Piano, M.A., Mountsier, T. and Nag, S., Semicon Korea Technical Symposium, 2000, pp. 279 (2000)Google Scholar