Hostname: page-component-84b7d79bbc-dwq4g Total loading time: 0 Render date: 2024-07-30T04:44:58.707Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Micro- and Nanoscale SiC Structures Using Selective Deposition Processes

Published online by Cambridge University Press:  01 February 2011

L. Chen ,
X. A. Fu ,
C. A. Zorman  and
M. Mehregany
L. Chen
Affiliation:
Dept. of Materials Science and Engineering, Case Western Reserve University Cleveland, OH 44106, USA
X. A. Fu
Affiliation:
Dept. of Electrical Engineering and Computer Science, Case Western Reserve University Cleveland, OH 44106, USA
C. A. Zorman
Affiliation:
Dept. of Electrical Engineering and Computer Science, Case Western Reserve University Cleveland, OH 44106, USA
M. Mehregany
Affiliation:
Dept. of Electrical Engineering and Computer Science, Case Western Reserve University Cleveland, OH 44106, USA
Get access

Abstract

A method to fabricate nanometer scale SiC beams and nanoporous SiC shells using conventional microlithographic techniques combined with selective APCVD has been developed as an alternative to nanolithographic patterning and electrochemical etching. The process involves the selective deposition of poly-SiC films on patterned SiO2/polysilicon/SiO2 thin film multilayers on (100) Si substrates using a carbonization-based 3C-SiC growth process. This technique capitalizes on significant differences in the nucleation of SiC on SiO2 and polysilicon surfaces in order to form mechanically durable and chemically stable structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 782: Symposium A – Micro- and Nanosystems , 2003 , A2.2
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mehregany, M, Zorman, C. A., Rajan, N., Wu, C. H., Proc. IEEE 86, 1594–610 (1998).Google Scholar
2. Huang, X. M. H., Zorman, C. A., Mehregany, M. and Roukes, M. L., Nature 421, 496 2003.Google Scholar
3. Rosenbloom, A., Shishkin, Y., Sipe, D., Ke, Y., Devaty, R.P., Choyke, W. J, Presented at the 2003 Int. Conf. SiC and Rel. Mat., Lyon France, Oct 5–10, 2003.Google Scholar
4. Lu, Q., Hu, J., Tang, K., Qian, Y., Zhou, G., Liu, X., Zhu, J., Appl. Phys. Lett., 75, 507 (1999).Google Scholar
5. Lai, H. L., Wong, N. B., Zhou, X. T., Peng, H. Y., Duan, X. F., Appl. Phys. Lett., 76, 294 (2000).Google Scholar
6. Kim, H. Y., Park, J., Yang, H., Chemical Communication, 256, 256257 (2003).Google Scholar
7. Zorman, C. A., Fleischman, A. J., Dewa, A. S., Mehregany, M., Jacob, C., Nishino, S., Pirouz, P., J. Appl. Phys., 78, 5136 (1995).Google Scholar