Hostname: page-component-76fb5796d-qxdb6 Total loading time: 0 Render date: 2024-04-26T20:44:39.640Z Has data issue: false hasContentIssue false
  • English
  • Français

Fabrication of Mg2Si from a Reused-silicon Source and its Thermoelectric Characteristics

Published online by Cambridge University Press:  01 February 2011

Masayasu Akasaka ,
Tsutomu Iida ,
Youhiko Mito ,
Takeru Omori ,
Yohei Oguni ,
Shigeki Yokoyama ,
Keishi Nishio  and
Yoshifumi Takanashi
Masayasu Akasaka
Affiliation:
m_akasak@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda, 278-8510, Japan
Tsutomu Iida
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Youhiko Mito
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Showa KDE Co.,Ltd., 30-13, Motoyoyogi-cho, Shibuya-ku, Tokyo, 151-0062, Japan
Takeru Omori
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Yohei Oguni
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Shigeki Yokoyama
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Showa KDE Co.,Ltd., 30-13, Motoyoyogi-cho, Shibuya-ku, Tokyo, 151-0062, Japan
Keishi Nishio
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Yoshifumi Takanashi
Affiliation:
iida_tsu@rs.noda.tus.ac.jp, Tokyo University of Science, Department of Materials Science and Technology, 2641 Yamazaki, Noda-shi, Chiba, 278-8510, Japan
Get access

Abstract

Polycrystalline Mg2Si was fabricated from a reused-Silicon source, based on Si sludge, using Spark Plasma Sintering technique. The n-type and p-type dopants, bismuth (Bi) and silver (Ag), respectively, were incorporated into the Mg2Si. The thermoelectric properties were estimated from 300 to 873K. The power factors of undoped and Bi-doped samples from the reused-Si source were comparable to those from a solar grade Si source (99.99999%). The power factor was estimated to be 2.5 × 10-5 W/cmK2 for the Bi-doped sample from the reused-Si source. However, the power factor of the Ag-doped, p-type sample from the reused-Si source was lower than that from solar grade Si source. The dimensionless figures of merit of samples from the resused-Si source were slightly lower than those from a solar grade Si source. The dimensionless figure of merit was estimated to be 0.53 at 812 K for Bi-doped sample from the reused-Si source.

Keywords

thermoelectricityenvironmentally benignsintering
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1044: Symposium U – Thermoelectric Power Generation , 2007 , 1044-U06-15
Copyright
Copyright © Materials Research Society 2008

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.The 4th Assessment Report of the Intergovernmental Panel on Climate Change (IPCC), 2007 Google Scholar
2. Terry, M, , Tritt and Subramanian, M.A., MRS Bull. 31, 188 (2006).Google Scholar
3. Boriseneko, Victor E, Semiconducting Silicide, (Springer, Berlin, 2000), pp. 285–288.Google Scholar
4. Morris, R.G., Redin, R.D. and Danielson, G.C., Phys. Rev. 109, 1909 (1958).Google Scholar
5. Heller, M. W., and Danielson, G. C., J. Phys. Chem. Solids. 23, 601 (1962)Google Scholar
6. Akasaka, M. et al. J. Appl. Phys. (submitted)Google Scholar
7. Hamada, N., Imai, T., and Funashima, H., J. Phys. Condens. Matter. 19, 365221 (2007)Google Scholar
8. Akasaka, M., Iida, T., Nemoto, T., Soga, J., Sato, J., Makino, K., Fukano, M., and Takanashi, Y., J. Cryst. Growth. 304, 196 (2007).Google Scholar
9. Middleton, A. E., and Scanlon, W. W., Phys. Rev. 92, 219 (1953)Google Scholar
10. Kittel, C., Introduction to Solid State Physics. 8th ed. (Wiley, NJ, 2005), pp. 156–157.Google Scholar