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Fabrication of High Quality Silicide Layers by Ion Implantation

Published online by Cambridge University Press:  21 February 2011

Karen J Reeson ,
Ann De Veirman ,
Russell Gwilliam ,
Chris Jeynes ,
Brian J Sealy ,
J Landuyt ,
Udo Bussmann ,
J K N Lindner  and
E H te Kaat
Karen J Reeson
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Ann De Veirman
Affiliation:
University of Antwerp (RUCA), Groenenborgerlaan 171, B2020, Antwerpen, Belgium
Russell Gwilliam
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Chris Jeynes
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
Brian J Sealy
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
J Landuyt
Affiliation:
University of Antwerp (RUCA), Groenenborgerlaan 171, B2020, Antwerpen, Belgium
Udo Bussmann
Affiliation:
Dept Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, United Kingdom
J K N Lindner
Affiliation:
Dept Physics, University of Dortmund, POB 500 500, 4600 Dortmund 50 FRG
E H te Kaat
Affiliation:
Dept Physics, University of Dortmund, POB 500 500, 4600 Dortmund 50 FRG
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Abstract

Buried layers of CoSi2 have been successfully fabricated in (100) single crystal silicon by implanting 350 keV Co+ to doses in the range 2 - 7 × 1017 cm−2 at a temperature of ∼550°C. For doses ≥ 4 × 101759Co+ cm−2, a continuous buried layer of CoSi2 grows epitaxially, during implantation. After annealing (1000°C 30 minutes) continuous layers of stoichiometric CoSi2 which are coherent with the matrix are produced for doses ≥ 4 × 101759Co+ cm−2. For doses of ≤ 2 × 101759Co+, cm−2, discrete octahedral precipitates of monocrystalline CoSi2 are observed. Isochronal annealing (for 5s) at temperatures in the range 800–1200°C, shows that at temperatures ≥ 900°C there is significant redistribution of the Co from B-type or interstitial sites → substitutional A-type lattice sites. As the anneal temperature is increased there is a corresponding improvement in the crystallinity and coherency of the Si and CoSi2 lattices. This shows that at a given temperature much of the Co redistribution takes place within the first 5s of the anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 217
Copyright
Copyright © Materials Research Society 1989

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