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Fabrication of Hemt-on-Si by Movpe for Lsi Applications

Published online by Cambridge University Press:  26 February 2011

Tatsuya Ohori ,
T. Kikkawa ,
M. Suzuki ,
K. Takasaki  and
J. Romeno
Tatsuya Ohori
Affiliation:
FUJITSU LABORATORIES LTD., 10–1 Morinosato-wakamiya, Atsugi
T. Kikkawa
Affiliation:
FUJITSU LABORATORIES LTD., 10–1 Morinosato-wakamiya, Atsugi
M. Suzuki
Affiliation:
FUJITSU LTD., 1015 Kamikodanaka, Kawasaki, Japan
K. Takasaki
Affiliation:
FUJITSU LTD., 1015 Kamikodanaka, Kawasaki, Japan
J. Romeno
Affiliation:
FUJITSU LABORATORIES LTD., 10–1 Morinosato-wakamiya, Atsugi
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Abstract

We grew selectively doped heterostructures on a Si substrate by metalorganic vapor phase epiaxy (MOVPE) for the first time and fabricated high electron mobility transistors (HEMTs). The conventional selective dry etching process to fabricate enhancement and depletion mode HEMTs on the same wafer, can be used without changing any process conditions. We evaluated the side-gate effect and obtained a critical voltage of 8V. This is large enough for LSI applications. We fabricated HEMTs on two kinds of GaAs-on-Si substrates. One had a small etch pit density (EPD) and poor surface morphology. The other had a large EPD, and better surface morphology. We compared the characteristics of devices on these two substrates, and the degradation of their characteristics was larger for the substrate with a small EPD and poor surface morphology. We conclude that improvement of surface morphology is more important than reduction of dis-location density. For the substrate with better surface morphology, maximum transconductance and K-value, for a gate length of 1 μm were 91% and 84% those of on-GaAs devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 505
Copyright
Copyright © Materials Research Society 1992

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References

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