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Fabrication of Enhancement-Mode GaN-Based Metal–Insulator-Semiconductor Field Effect Transistor

Published online by Cambridge University Press:  15 March 2011

P. Chen ,
R. Zhang ,
Y.G. Zhou ,
S.Y. Xie ,
Z.Y. Luo ,
Z.Z. Chen ,
W.P. Li ,
S.L. Gu  and
Y.D. Zheng
P. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
R. Zhang
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y.G. Zhou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
S.Y. Xie
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Z.Y. Luo
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Z.Z. Chen
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
W.P. Li
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
S.L. Gu
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China
Y.D. Zheng
Affiliation:
Department of Physics, Nanjing University, Nanjing 210093, P.R. China, E-mail: ydzheng@netra.nju.edu.cn
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Abstract

An enhancement-mode GaN metal-insulator-semiconductor field-effect transistor was successfully fabricated on a GaN/AlGaN/GaN double heterojunction structure with SiO2 as insulator layer. The enhancement mode DC characteristics have been achieved in the device with a gate length of 6 μm and a gate width of 100 μm. The device exhibited a DC transconductance of 0.6 mS/mm and a maximum drain-source current of 5 mA/mm. The gate leakage current is lower than 10−6 A at a bias of -10 V and the gate breakdown voltage is higher than 20 V. The channel stands a good chance of forming by hole accumulation between the top GaN layer and the AlGaN layer. The p-channel can be attributed to the presence of a piezoelectric field in the heterojunction, and the strongly asymmetric band bending and carriers distribution induced by the piezoelectric field. High-frequency capacitance-voltage measurement also gives a circumstantial evidence of the presence of a p-channel in the device structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T2.9.1
Copyright
Copyright © Materials Research Society 2000

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References

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