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Fabrication and Low Temperature Transport Studies of Sub-Micron, In-Plane Gated Fets Defined by Low Energy Ion Exposure

Published online by Cambridge University Press:  22 February 2011

C.C. Andrews ,
G.F. Spencer ,
F. Li ,
M.H. Weichold  and
W.P. Kirk
C.C. Andrews
Affiliation:
The NanoFAB Center, Department of Physics, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-4242
G.F. Spencer
Affiliation:
The NanoFAB Center, Department of Physics, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-4242
F. Li
Affiliation:
The NanoFAB Center, Department of Physics, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-4242
M.H. Weichold
Affiliation:
The NanoFAB Center, Department of Physics, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-4242
W.P. Kirk
Affiliation:
The NanoFAB Center, Department of Physics, Department of Electrical Engineering, Texas A&M University, College Station, TX 77843-4242
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Abstract

Nanoscale gated quantum wires in GaAs MODFET material with the conduction channel and gates in the plane of the 2DEG have been fabricated and studied. Electron beam lithography was used for mask definition followed by flood exposure to low energy argon ions (150 eV) for pattern transfer into the 2DEG. Compared to metal top-gate designs the in-plane design simplifies fabrication and reduces device capacitance, promising ultra-fast operation. This method of pattern transfer produced devices having channel-to-gate isolation of 1014 Ω and breakdown fields above 106 V/cm at 4.2 K. In addition to exhibiting standard FET characteristics, including gating to pinchoff, the devices showed significant negative differential resistance (NDR) in the saturation region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 67
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Shur, M., GaAs Devices and Circuits, (Plenum Press, New York, 1987) p. 611.Google Scholar
2. Wieck, A.D. and Ploog, K., Surf. Sci. 229, 252 (1990); also Appl. Phys. Lett. 61, 1048 (1992).Google Scholar
3. Wieck, A.D. and Ploog, K., Appl. Phys. Lett. 56, 928 (1990).Google Scholar
4. McLean, J.S., Wieck, A.D., Bleder, M., and Ploog, K., Appl. Phys. Lett. 61, 1324 (1992).Google Scholar
5. Liu, X. and Niu, Q., Phys. Rev. B 46, 10215 (1992).Google Scholar
6. Scherer, A., Roukes, M.L., Craighead, H.G., Ruthen, R.M., Beebe, E.D., and Harbison, J.P., Appl. Phys. Lett. 51, 2133 (1987).Google Scholar
7. Cheeks, T.L., Roukes, M.L., Scherer, A., and Craighead, H.G., Appl. Phys. Lett. 53, 1964 (1988).Google Scholar
8. Scherer, A. and Roukes, M.L., Appl. Phys. Lett. 55, 377 (1989).Google Scholar
9. Andrews, C. C. and Kirk, W. P., J. Vac. Sci. Tech. B 8, 1858 (1990).Google Scholar
10. Scherer, A., Roukes, M.L., and Gaag, B.P. Van der, in Nanostructure Physics and Fabrication, edited by Reed, M.A. and Kirk, W.P., (Academic Press, Boston, 1989), p. 431.Google Scholar
11. Andrews, C. C., Spencer, G. F., Li, F., Niu, Q., and Kirk, W. P., in preparation.Google Scholar