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Fabrication and device characteristics of bulk GaN-based Schottky diodes

Published online by Cambridge University Press:  01 February 2011

Yi Zhou ,
Dake Wang ,
Claude Ahyi ,
Chin-Che Tin ,
John Williams ,
Minseo Park ,
N. Mark Williams  and
Andrew Hanser
Yi Zhou
Affiliation:
zhouyi1@auburn.edu, Auburn University, Department of Physics, United States
Dake Wang
Affiliation:
wangda1@auburn.edu, Auburn University, Department of Physics, United States
Claude Ahyi
Affiliation:
ahyiaya@auburn.edu, Auburn University, Department of Physics, United States
Chin-Che Tin
Affiliation:
cctin@physics.auburn.edu, Auburn University, Department of Physics, United States
John Williams
Affiliation:
williams@physics.auburn.edu, Auburn University, Department of Physics, United States
Minseo Park
Affiliation:
park@physics.auburn.edu, Auburn University, Department of Physics, United States
N. Mark Williams
Affiliation:
williams@kymatech.com, Kyma Technologies, Inc., United States
Andrew Hanser
Affiliation:
hanser@kymatech.com, Kyma Technologies, Inc., United States
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Abstract

In this investigation, Schottky diodes with different device sizes (150μm, 420μm and 700μm) were fabricated on the Ga-face of a free-standing n--GaN wafer produced by Kyma Technologies, Inc. Full area back side ohmic contact was prepared on the N-face of the bulk GaN using Ti/Al. Without any edge-termination scheme, a relatively high reverse breakdown voltage of 240V was achieved. The reverse breakdown voltage decreases as the device size increases. The forward turn-on voltage was as low as 2.4V at room temperature for the 150μm diameter Schottky diodes. The best on-state resistance was 7.56 mΩcm2 for diodes with VB=240V, producing a figure-of-merit (VB2/RON) of 7.6 MWcm-2. The Schottky diode also showed an extremely short reverse recovery time (< 20 ns) switching from forward bias to reverse bias.

Keywords

III-Vsemiconductingelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005 , 0892-FF13-09
Copyright
Copyright © Materials Research Society 2006

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References

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