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Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates

Published online by Cambridge University Press:  01 February 2011

Yushi Kato ,
Yusaburo Ono ,
Yasuyuki Akita ,
Makoto Hosaka ,
Naoki Shiraishi ,
Nobuo Tsuchimine ,
Susumu Kobayashi  and
Mamoru Yoshimoto
Yushi Kato
Affiliation:
kato.y.am@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Yusaburo Ono
Affiliation:
ono.y.ad@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Yasuyuki Akita
Affiliation:
akita.y.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Makoto Hosaka
Affiliation:
hosaka.m.ab@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Naoki Shiraishi
Affiliation:
shiraishi.n.ab@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
Nobuo Tsuchimine
Affiliation:
tsuchimine@hotmail.com, TOSHIMA Manufacturing Company Limited, Saitama, Japan
Susumu Kobayashi
Affiliation:
Kobayashi@material-sys.com, TOSHIMA Manufacturing Company Limited, Saitama, Japan
Mamoru Yoshimoto
Affiliation:
yoshimoto.m.aa@m.titech.ac.jp, Tokyo Institute of Technology, Department of Innovative & Engineered Materials, Yokohama, Japan
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Abstract

The crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.

Keywords

thin filmnucleation & growthelectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1148: Symposium PP – Solid-State Chemistry of Inorganic Materials VII , 2008 , 1148-PP12-02
Copyright
Copyright © Materials Research Society 2009

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