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Exigent-Accommodation-Volume of Precipitation and Formation of Oxygen Precipitates in Silicon

Published online by Cambridge University Press:  28 February 2011

T. Y. Tan
T. Y. Tan*
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

In this paper we first describe, in some detail, the nature of an exigentaccommodation- volume factor associated with oxygen (Oi) precipitation in Czochralski (CZ) Si. This factor is regarded as a causal or characteristic factor which influences many aspects of the SiO2 precipitate nucleation and growth phenomena. Employing this factor, we then describe the possible explanations of two outstanding features of Oi precipitation in CZ Si: the precipitation retardation/recovery phenomena and the nucleation incubation phenomena.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 269
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Aaronson, H. I. and Lee, J. K., Lectures on the Theory of Phase Transformations, Ed. Aaronson, H. I. (Metallurgical Soc. of AIME, NY, 1975) p. 83.Google Scholar
2. Ogino, M., Appl. Phys. Lett. 41, 847 (1982).CrossRefGoogle Scholar
3. Kung, C. Y., Forbes, L. and Peng, J. D., Defects in Silicon, Eds. Bullis, W. M. and Kimerling, L. C. (Electrochem. Soc., Pennington, NJ, 1983) p. 185.Google Scholar
4. Tan, T. Y. and Kung, C. Y., J. Appl. Phys., Feb. 1 issue (1986).Google Scholar
5. Inoue, N., Wada, K. and Osaka, J., Semiconductor Silicon 1981, Eds. Huff, H. R., Kriegler, R. J. and Takeishi, Y. (Electrochem. Soc., Pennington, NJ, 1981) p. 282.Google Scholar
6. Tan, T. Y., Wu, L. L. and Tice, W. K., Appl. Phys. Lett. 29, 765 (1976).Google Scholar
7. Yang, K. H., Kappert, H. F. and Schwuttke, G. H., Phys. Status Solidi, A 50, 221 (1978).Google Scholar
8. Maher, D. M., Staudinger, S. and Patel, J. R., J. Appl. Phys. 47, 3813 (1976).CrossRefGoogle Scholar
9. Templehoff, K., Gleichmann, R., Spiegelberg, F. and Wruch, D., Phys. Status Solidi A 56, 213 (1979).Google Scholar
10. Bourett, A., Thibault-Desseaux, J. and Seidman, D. N., J. Appl. Phys., 55, 825 (1984).Google Scholar
11. Kleinhenz, R. and Tan, T. Y., to be published.Google Scholar
12. Tan, T. Y. and Tice, W. K., Phil. Mag. 34, 615 (1976).Google Scholar
13. Ponce, F. A. and Hahn, H., Electron Microscopy of Materials (Mat. Res. Soc. Proc. Vol.31), Eds. Krakow, W., Smith, D. A. and Hobbs, L. W. (North- Holland, NY, 1984) p. 153.Google Scholar
14. Hu, S. M., Appl. Phys. Lett. 36, 561 (1980).Google Scholar
15. Gosele, U. and Tan, T. Y., Appl. Phys. A 28, 79 (1982).Google Scholar
16. Schaake, H. F., Baber, S. C. and Pinizotto, R. F., in Ref. 5, p. 273.Google Scholar
17. Oehrlein, G. S., Lindström, J. L. and Corbett, J. W., Appl. Phys. Lett. 40, 241 (1982).Google Scholar
18. Craven, R. A., in Ref 5, p. 254.Google Scholar
19. Tan, T. Y. and Gösele, U., J. Appl. Phys. 53, 4767 (1982).Google Scholar
20. Fair, R. B., Defects in Semiconductors II, Eds. Mahajan, S. and Corbett, J. W. (North-Holland, NY, 1983) p. 61.Google Scholar
21. Tan, T. Y. and Gösele, U., Appl. Phys. A 37, 1 (1985).Google Scholar
22. Burke, J., The Kinetics of Phase Transformations in Metals, (Pergamon, London, 1965) Chapter 5.Google Scholar
23. Russell, K. C., Phase Transformations, Ed. Aaronson, H. I. (Am. Soc. Metals, Metals Park, OH, 1970) p. 219.Google Scholar
24. Kashchiev, D., Surf. Science 14, 209 (1969).Google Scholar