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Excess Charge Carrier Kinetics in Amorphous Silicon/Crystalline Silicon Heterojunctions

Published online by Cambridge University Press:  10 February 2011

S. v. Aichberger ,
O. Hahneiser ,
J. Löffler ,
H. Feist  and
M. Kunst
S. v. Aichberger
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
O. Hahneiser
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
J. Löffler
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
H. Feist
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
M. Kunst
Affiliation:
Hahn-Meitner-Institut, Department Solare Energetik, Glienicker Str. 100, 14109 Berlin, Germany
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Abstract

By contactless transient photoconductivity measurements it is shown that i a-Si:H films, both of standard quality films and annealed low temperature films, passivate the c-Si surface for electron-hole pairs generated in the c-Si substrate. Films deposited at low temperature without annealing do not lead to passivation of the c-Si surface. The injection of excess electrons from a standard a-Si:H film into c-Si with a time constant of a few microseconds and a rather high efficiency was observed. For an annealed 120°C a-Si:H film a slower and less efficient injection was measured, whereas an annealed 50°C a-Si:H shows no appreciable injection.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 163
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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