No CrossRef data available.
Article contents
Evidence for Metastabile State of DX Center in AxGa1-xAs
Published online by Cambridge University Press: 03 September 2012
Abstract
Photo-Deep Level Transient Spectroscopy with 1.38 eV light reveals a new level with thermal activation energy 0.2 eV of DX centers in silicon doped Alx Ga1-xAs (x = 0.26) for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of thermodynamically metastable state DX.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1992