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Evidence for a defect-assisted low resistive conductivity in cw laser beam mixed Au/Te/Au/GaAs contacts.

Published online by Cambridge University Press:  03 September 2012

J. Watté ,
R. E. Silverans ,
H. Münder  and
K. Wuyts
J. Watté
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
R. E. Silverans
Affiliation:
Laboratorium voor Vaste Stof-Fysika en Magnetisme, K.U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium
H. Münder
Affiliation:
Institut für Schicht-und Ionentechnik, KFA Jülich, Postfach 1913, 5170 Jülich, Germany
K. Wuyts
Affiliation:
Instituut voor Kern-en Stralingsfysika, K. U. Leuven, Celestijnenlaan 200 D, B-3001 Leuven, Belgium
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Abstract

CW laser beam mixed Au/Te/Au/n-GaAs contacts have been studied by RBS, Möss-bauer and Raman spectroscopy. For both low and high laser power mixing, resulting in respectively Schottky-type and ohmic contacts, the formation of non-uniformly dispersed Ga2Te3 crystallites was observed. However, for the ohmic contacts the formation of a high density of defect complexes in the GaAs surface layers was revealed. The experimental results suggest that the ohmic conduction mechanism is based on a hopping or a defect assisted tunneling process through the contact zone, consistent with the amorphous/highly defective heterojunction model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 659
Copyright
Copyright © Materials Research Society 1992

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References

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