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Evidence Against a Reduced Melting Temperature in Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

S.A. Kokorowski ,
G.L. Olson ,
J.A. Roth  and
L.D. Hess
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California, 90265, USA
G.L. Olson
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California, 90265, USA
J.A. Roth
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California, 90265, USA
L.D. Hess
Affiliation:
Hughes Research Laboratories, 3011 Malibu Canyon Road, Malibu, California, 90265, USA
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Abstract

Experimental results are presented which indicate that amorphous silicon does not melt at a temperature significantly lower than the melting point of crystalline silicon (1693°K), contrary to recent reports which suggest a 300 to 500°K melting point depression. Time-resolved optical reflectivity measurements are used to determine the temperature and to investigate phase changes which occur in silicon during cw laser heating. It is shown that amorphous silicon films produced by arsenic implantation into Si(100) do not melt when heated to temperatures in excess of 1600°K. An alternate interpretation of previous work that is consistent with the present findings is proposed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 195
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

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