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Evaluation Of Reaction Dynamics Of Film Depositions In Plasma Cvds By Using A Remote Plasma Cvd System

Published online by Cambridge University Press:  15 February 2011

S. Wickramanayaka ,
K. Kitamura ,
Y. Nakanishi  and
Y. Hatanaka
S. Wickramanayaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432, Japan.
K. Kitamura
Affiliation:
Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432, Japan.
Y. Nakanishi
Affiliation:
Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432, Japan.
Y. Hatanaka
Affiliation:
Research Institute of Electronics, Shizuoka University, 3–5–1 Johoku, Hamamatsu 432, Japan.
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Abstract

detailed study was carried out in investigating the chemical reaction scheme involved with the deposition of a-SiC:H films by carbosilane sources in a remote hydrogen plasma. As the carbosilane sources, tetramethylsilane (TMS), hexamethyldisilane (HMDS) and tetrakis(trimethylsilyl)silane (TMSS) were used. Depositions were performed in the presence and absence of both UV radiation and H radicals. UV radiation activates only the TMS molecules out of the above three types of molecules in depositing a-SiC:H films. Other two monomers are seen to be activated by hydrogen radicals. It is proposed that the most susceptible bond to be broken at first by hydrogen radical is the Si-Si bond. A reaction model for the formation of a- SiC:H films was presented by considering the Me2Si=CH2 as the film forming precursor.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 145
Copyright
Copyright © Materials Research Society 1996

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References

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