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Evaluation of Crystalline Quality of Zirconium Dioxide Films on Silicon by Means of Ion Beam Channeling

Published online by Cambridge University Press:  28 February 2011

Yoshiki Nishibayashi ,
Takeshi Imura ,
Yukio Osaka  and
Hirofumi Fukumoto
Yoshiki Nishibayashi
Affiliation:
Faculty of Engineering, Hiroshima University, Higashi—Hiroshima 724, Japan
Takeshi Imura
Affiliation:
Faculty of Engineering, Hiroshima University, Higashi—Hiroshima 724, Japan
Yukio Osaka
Affiliation:
Faculty of Engineering, Hiroshima University, Higashi—Hiroshima 724, Japan
Hirofumi Fukumoto
Affiliation:
Faculty of Engineering, Hiroshima University, Higashi—Hiroshima 724, Japan
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Abstract

Zirconium dioxide (ZrO2) films are deposited on Si(100) and Si(lll) substrates at 800ºC by vacuum evaporation. Channeling spectrum of the Rutherford backscattering shows that ZrO2 films (tetragonal(200)) are epitaxially grown on the Si(100) substrate. The fluctuation of crystallite orientation in the epitaxial layer is estimated to be 0.32º, by analyzing the angular dependence of the aligned and random backscattering spectra. Energy dependence of dechanneling factors in 0.3—2.0 MeV 4He+ indicates that the dominant defect arises from the stackingfaults.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 363
Copyright
Copyright © Materials Research Society 1988

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References

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