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Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall Morphology

Published online by Cambridge University Press:  25 February 2011

Y. J. Chabal
Y. J. Chabal*
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974-0636, (USA)
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Abstract

HF etches silicon oxide, removes metal impurities and completely terminates the silicon surface with hydrogen. The H-passivated Si surfaces are stable, but can be slowly and selectively etched in buffered HF solutions or in hot water, changing the initial morphology of the interface. Si(111) surfaces flatten, forming large, ideally H-terminated (111) planes. Si(100) surfaces roughen, ultimately developing H-terminated (111) facets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 349
Copyright
Copyright © Materials Research Society 1992

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References

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