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Etching and Surface Modification of Polyimide in O2 -SF6 Plasmas

Published online by Cambridge University Press:  28 February 2011

M. Kogoma  and
G. Turban
M. Kogoma
Affiliation:
Laboratoire de Physique Corpusculaire, U.A.CNRS 838, Université de Nantes -2 rue de la Houssinière -44072 Nantes, France Permanent address Faculty of Science and Engineering, Sophia University, Tokyo 102, Japan
G. Turban
Affiliation:
Laboratoire de Physique Corpusculaire, U.A.CNRS 838, Université de Nantes -2 rue de la Houssinière -44072 Nantes, France
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Abstract

Etch rates of Kapton H polyimide film in SF6 - O2 plasmas (0.25 torr) were studied as a function of the input gas mixture, the excitation frequency (25 kHz -450 kHz; 13.56 MHz) and the biasing mode.The treated surface was examined by X P S, SEM and contact angle measurement.

The ion and neutral species of the plasma were sampled and analyzed by mass spectrometry.A proposed kinetic analysis of the etching mechanism is in good agreement with the experimental data.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986 , 401
Copyright
Copyright © Materials Research Society 1986

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References

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