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Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

Published online by Cambridge University Press:  10 May 2012

Daisuke Hamashita ,
Yasuyoshi Kurokawa  and
Makoto Konagai
Daisuke Hamashita
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Yasuyoshi Kurokawa
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
Makoto Konagai
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo, 152-8552, Japan
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Abstract

P-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

Keywords

grain sizescanning probe microscopy (SPM)photovoltaic
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1426: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology–2012 , 2012 , pp. 347 - 352
Copyright
Copyright © Materials Research Society 2012

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References

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