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The Estimation and revision of barrier heights in 4H- SiC and 6H-sic Schottky Diodes

Published online by Cambridge University Press:  10 February 2011

You-Sang Lee ,
D.-Y. Kim ,
J.-K. Oh ,
M.-K. Han  and
Y.-I. Choi
You-Sang Lee
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., 56-1 Shinlim-dong, Kwanak-ku, 151–724 Seoul, Korea, +82-2-880-7254, +82-2-871-5974, E-mail: igbt@chollian.net
D.-Y. Kim
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., 56-1 Shinlim-dong, Kwanak-ku, 151–724 Seoul, Korea, +82-2-880-7254, +82-2-871-5974, E-mail: igbt@chollian.net
J.-K. Oh
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., 56-1 Shinlim-dong, Kwanak-ku, 151–724 Seoul, Korea, +82-2-880-7254, +82-2-871-5974, E-mail: igbt@chollian.net
M.-K. Han
Affiliation:
School of Electrical Eng., Seoul Nat'l Univ., 56-1 Shinlim-dong, Kwanak-ku, 151–724 Seoul, Korea, +82-2-880-7254, +82-2-871-5974, E-mail: igbt@chollian.net
Y.-I. Choi
Affiliation:
School of Electronics Eng., Ajou Univ., 5 Wonchun-dong, Suwon 442–749, Korea
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Abstract

The barrier heights of various Schottky diodes in n-type 4H-SiC and 6H-SiC is estimated from published data at Si-face and C-face, respectively, employing the LSM (least square method). It is found that the barrier height in SiC Schottky diode is a linear function of metal work function as φB. =a φm + b. The a is about 0.63 ∼ 0.72. The already established analytic expression in [9] is compared with the estimated linear expression and revised by employing the empirical factor, α between the upper and lower boundary of interface state density, DIT. The values of a lie in 1.65 ∼ 32.1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 175
Copyright
Copyright © Materials Research Society 1998

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References

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