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ESR Study of Electrochemically Doped Chalcogenide Nanotubes

Published online by Cambridge University Press:  10 February 2011

Denis Arcon ,
Andrej Zorko ,
Pavel Cevc ,
Ales Mrzel ,
Maja Remskar ,
Dragan Mihailovic ,
Robert Dominko  and
Miran Gaberscek
Denis Arcon
Affiliation:
Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000 Ljubljana, Slovenia Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Andrej Zorko
Affiliation:
Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Pavel Cevc
Affiliation:
Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Ales Mrzel
Affiliation:
Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Maja Remskar
Affiliation:
Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Dragan Mihailovic
Affiliation:
Institute Jozef Stefan, Jamova 39, 1000 Ljubljana, Slovenia
Robert Dominko
Affiliation:
National Chemistry Institute, Hajdrihova 19, 1000 Ljubljana, Slovenia
Miran Gaberscek
Affiliation:
National Chemistry Institute, Hajdrihova 19, 1000 Ljubljana, Slovenia
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Abstract

Electrochemical activity of differently pretreated single-wall subnanometer-diameter molybdenum disulfide tubes (nMoS2) was tested and compared with layered MoS2 material. In as prepared and de-iodized nMoS2 samples a significant increase in the charge capacity has been found compared to the one measured in dispersed nMoS2 or layered MoS2. Enhanced electrochemical activity has been attributed to a particular one-dimensional topology of nanotubes bundles. Electrochemically doped samples were then studied with X-band ESR. While undoped nMoS2 show no X-band ESR signal between room temperature and 4 K we found in heavily doped nMoS2 samples two distinct ESR components: a narrow component with a linewidth of few Guass and a broad component with a linewidth of more than 800 G. The broad ESR component is characteristic of Mo d-orbital-derived band. The temperature dependence of the ESR spin susceptibility and the linewidth of the broad ESR component can be discussed either in terms of conducting electrons coupled to defects or in terms of random-exchange Mo Heisenberg chain model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 775: Symposium P – Self-Assembled Nanostructured Materials , 2003 , P9.26
Copyright
Copyright © Materials Research Society 2003

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