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Esr of Defects in III–V Compounds

Published online by Cambridge University Press:  15 February 2011

Jürgen Schneider
Jürgen Schneider*
Affiliation:
Fraunhofer-Institut für Angewandte Festkörperphysik, D–7800Freiburg, Germany
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Abstract

A survey is given on deep defects in GaP, GaAs and InP identified by electron spin resonance (ESR). Defect structures to be discussed are (i) 3d transition metals, (ii) antisite defects and (iii) radiation induced centers. The relevance of such defects for the III–V materials technology will be illustrated by representative examples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 14: Symposium B – Defects in Semiconductors II , 1982 , 225
Copyright
Copyright © Materials Research Society 1982

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References

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