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ESR and LESR Studies in CVD Diamond

Published online by Cambridge University Press:  15 February 2011

C. F. O. Graeff ,
E. Rohrer ,
C. E. Nebel ,
M. Stutzmann ,
H. GUttler  and
R. Zachai
C. F. O. Graeff
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, carlos.graeff@wsi.physik.tu-muenchen.de
E. Rohrer
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, carlos.graeff@wsi.physik.tu-muenchen.de
C. E. Nebel
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, carlos.graeff@wsi.physik.tu-muenchen.de
M. Stutzmann
Affiliation:
Walter Schottky Institut, TU-MUnchen, D-85748 Garching, Germany, carlos.graeff@wsi.physik.tu-muenchen.de
H. GUttler
Affiliation:
Daimler-Benz AG, Forschung und Technik, D-89013 Ulm, Germany
R. Zachai
Affiliation:
Daimler-Benz AG, Forschung und Technik, D-89013 Ulm, Germany
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Abstract

CVD diamond films with nitrogen content varying from 10 ppm to 132 ppm have been studied by electron spin resonance (ESR), light-induced ESR (LESR) as well as spin-dependent conductivity (SDC). Two characteristic signals have been observed. A carbon-related defect line with g = 2.0029 ± 0.0002 and width 4 ± 1 G, is observed in ESR, LESR and SDC. The intensity of this line measured by ESR increases linearly with nitrogen content. For low-defect-density samples, or after illuminating the high-defect-density samples with UV light, a second signal is observed both in ESR and LESR, but not in SDC, with a central line at g = 2.0024 ± 0.001 and width 0.2 ± 0.1 G and related hyperfine satellites ≈30 G away from the central line. This line is assigned to isolated substitutional nitrogen, the so-called P1 center. The density of N-related paramagnetic states is strongly affected by illumination and heat treatments. Spin-dependent conductivity measurements show that the dark conductivity at room temperature in CVD-diamond is dominated by hopping at the g = 2.0029 defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 495
Copyright
Copyright © Materials Research Society 1996

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References

1. Wilson, J.Ib. and Kulisch, W., special issue of physica status solidi (a) 154: Diamond Thin Films, (1996).Google Scholar
2. Smith, W.V., Sorokin, P.P., Gelles, I.L. and Lasher, G.J., Phys. Rev. 115, 1546 (1959). For a review on electron spin resonance in natural and high pressure synthetic diamond see, J.H.N. Loubser and J.A. van Wyk, Rep. Prog. Phys. 41, 1201 (1978).Google Scholar
3. Kajihara, S.A., Antonelli, A., Bernholconkin, B., and Okumura, K., Appl. Phys. Lett. 59, 3148 (1991).Google Scholar
4. Mort, J., Mach, M.A., Car, R., Phys. Rev. Lett. 66, 2010 (1991).Google Scholar
5. Fusser, H.-J., Rosier, M., Hartweg, M., Zachai, R., Jiang, X. and Klages, C.-P., Electrochem. Soc. 93 (17), 102 (1993).Google Scholar
6. Bergmeier, A., Dollinger, G., Faestermann, T., Frey, C.M., Ferguson, M., Guehler, H., Schulz, G., Willerscheid, H., Diamond and Related Materials, 1996 (unpublished).Google Scholar
7. Jia, H., Shinar, J., Lang, D.P. and Pruski, M., Phys. Rev. B 48, 17595 (1993).Google Scholar
8. Holder, S.L., Rowan, L.G. and Krebs, J.J., Appl. Phys. Lett. 64, 1091 (1994).Google Scholar
9. Hoinkis, M., Weber, E.R., Landstrass, M.I., Piano, M.A., Han, S., and Kania, D.R., Appl. Phys. Lett. 59, 1870 (1991).Google Scholar
10. Farrer, R.G., Solid State Commun. 7, 685 (1969).Google Scholar
11. Rohrer, E., Graeff, C.F.O., Jansen, R., Nebel, C.E., Stutzmann, M., Grittler, H., and Zachai, R. Phys. Rev. B, 1996 (unpublished).Google Scholar