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Equilibrium Shape of CoSi2 in Silicon

Published online by Cambridge University Press:  21 February 2011

D.D. Adams ,
S.S. Yalisove  and
D.D. Eaglesham
D.D. Adams
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, MI, 48109-2136
S.S. Yalisove
Affiliation:
Department of Materials Science and Engineering, University of Michigan, 2300 Hayward St., Ann Arbor, MI, 48109-2136
D.D. Eaglesham
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, N.J., 07974
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Abstract

The energetics associated with the formation of CoSi2 have been investigated by using the equilibrium shape of isolated precipitates. Two types of precipitates were studied: CoSi2 equilibrated at the Si surface and CoSi2 equilibrated within the Si lattice. CoSi2 precipitates form by facetting along {111} and {1100} planes in Si. Using a reverse Wulff approach, a ratio of interfacial free energies of γ{100} / γ{111) has been measured to be 1.43 ± 0.07.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 287
Copyright
Copyright © Materials Research Society 1993

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References

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