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EPR Study Of Defect Formation In H Implanted And Annealed CZ Si

Published online by Cambridge University Press:  15 February 2011

B. Pivac ,
B. Rakvin ,
F. Corni ,
R. Tonini  and
G. Ottaviani
B. Pivac
Affiliation:
R. Boskovic Institute, P.O.Box 1016, HR-10000 Zagreb, Croatia
B. Rakvin
Affiliation:
R. Boskovic Institute, P.O.Box 1016, HR-10000 Zagreb, Croatia
F. Corni
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
R. Tonini
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
G. Ottaviani
Affiliation:
Dipartimento di Fisica, Universita di Modena, 1–41100 Modena MO, Italy
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Abstract

Structural defects produced in single crystal silicon after hydrogen ion implantation were studied by electron paramagnetic resonance spectroscopy. Samples implanted at 77K show the presence of vacancy clusters that serve as precursors for nanoblister formation upon subsequent thermal treatment. Evolution of vacancy clusters at various stages of thermal annealing show the influence of implanted hydrogen redistribution that passivates the paramagnetic activity in the intermediate temparature range. At still higher temperatures hydrogen outdifluses from the bulk activating remaining structural defects. At these temperatures, formed vacancy clusters gettered oxygen present in the bulk forming, therefore, VxOy complexes. Finally, at temperatures above 700°C vacancy clusters disintegrate completely.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 293
Copyright
Copyright © Materials Research Society 1997

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