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Epitaxial ZnS, ZnSe and ZnS-ZnSe Superlattices Grown on (001)GaAs By Pulsed-Laser Ablation

Published online by Cambridge University Press:  01 January 1992

J. W. McCamy ,
Douglas H. Lowndes ,
J. D. Budai ,
G. E. Jellison Jr. ,
I. P. Hermant  and
S. Kimt
J. W. McCamy
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxvile, TN 37996–1200
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
J. D. Budai
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831–6056
I. P. Hermant
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
S. Kimt
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
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Abstract

Pulsed KrF (248nm) laser ablation of polycrystalline ZnS and ZnSe targets has been used to grow high quality, fully epitaxial ZnS and ZnSe thin films on (001) GaAs. Photoluminescence measurements of the ZnS thin films show strong edge emission, while ZnSe thin films show free excitonic as well as donor and acceptor peaks. By alternately ablating each target, strained layer superlattices of the form (ZnSe)m–(ZnS)n were grown with as many as 65 periods of compositional modulation. A ZnSxSe1–x structure also was fabricated which simultaneously incorporated both continuously graded and abrupt compositional changes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 471
Copyright
Copyright © Materials Research Society 1993

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References

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