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Epitaxial Superconductor Film Growth on Ultratffln Silicon Wafers for Infrared Detection

Published online by Cambridge University Press:  26 February 2011

Q. Li ,
D. B. Fenner ,
M. E. Johansson ,
D. G. Hamblen ,
W. D. Hamblen ,
L. Lynds ,
K. Karrai ,
S. Liu ,
F. Dunmore  and
H. D. Drew
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Q. Li
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
D. B. Fenner
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
M. E. Johansson
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
D. G. Hamblen
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
W. D. Hamblen
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
L. Lynds
Affiliation:
Advanced Fuel Research, East Hartford, CT 06138
K. Karrai
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742
S. Liu
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742
F. Dunmore
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742
H. D. Drew
Affiliation:
Center for Superconductivity Research, University of Maryland, College Park, MD 20742
H. Zhang
Affiliation:
Department of Material Science, Northwestern University, Evanston, IL 60208
P. Xu
Affiliation:
Department of Material Science, Northwestern University, Evanston, IL 60208
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Abstract

Epitaxial YBCO/YSZ thin films have been successfully grown on ultrathin Si(100) wafers as part of an effort to fabricate infrared detectors which are both fast and highly responsive. Single crystal Si wafers with thicknesses ranging from 400 μm to 3μm are used as growth substrates. Detectors are fabricated by patterning the YBCO films into meanderline structures and their IR response is evaluated as a function of substrate thickness. So far, we have achieved a responsivity of 1750 V/W with a 10 Hz chopping rate on the 25 μm substrate, and rise/fall times as fast as 3 msec on the 3 μm substrate. We have also measured the low temperature IR transmission from 15 μm to 300 μm of both the YSZ buffered Si substrate, and the complete YBCO/YSZ/Si sample. This study indicates that silicon is a superior substrate for the fabrication of high performance infrared focal plane detector arrays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 275: Symposium S – Layered Superconductors: Fabrication, Properties and Applications , 1992 , 747
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Stratton, T. G., Cole, B. E., Kruse, P. W., Wood, R. A., Beauchamp, K., Wang, T. F., Johnson, B., and Goldman, A. M., Appl. Phys. Lett. 57, 99 (1990).Google Scholar
[2] Verghese, S., Richards, P. L., Char, K., and Sachtjen, S. A., SPIE Conf. 1292, 137 (1990).Google Scholar
[3] Brasunas, J. and Lakew, B., SPIE Conf. 1477, Orlando FL, Apr 1991.Google Scholar
[4] Fork, D. K., Fenner, D. B., Connell, G. A. N., Phillips, J. M. and Geballe, T.H., Appl. Phys. Lett. 57, 1137(1990).Google Scholar
[5] Fork, D. K., Fenner, D. B., Barton, R. W., Phillips, J. M., Connell, G. A. N., Boyce, J. B. and Geballe, T. H., Appl. Phys. Lett. 57, 1161 (1990).Google Scholar
[6] Schlesinger, Z. et al, Phys. Rev. Lett. 65, 801 (1990).Google Scholar
[7] Forro, L., et al. Phys. Rev. Lett. 65, 1941 (1990).Google Scholar
[8] Pham, T., Lee, M. W., Drew, H. D., Welp, U., and Fang, Y., Phys. Rev. B4, 5377 (1991).Google Scholar