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Epitaxial Silicides

Published online by Cambridge University Press:  15 February 2011

R. T. Tung ,
J. M. Poate ,
J. C. Bean ,
J. M. Gibson  and
D. C. Jacobson
R. T. Tung
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974(U.S.A.)
J. M. Poate
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974(U.S.A.)
J. C. Bean
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974(U.S.A.)
J. M. Gibson
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974(U.S.A.)
D. C. Jacobson
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974(U.S.A.)
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Extract

The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted. Perfect singlecrystal CoSi2 films can be grown on Si(111) substrates by ultrahigh vacuum techniques using conventional deposition and annealing at about 900°C and molecular beam epitaxy codeposition at about 600°C. The single-crystal films are rotated 180° with respect to the substrate. Novel defect arrays are observed at the interface. Resistivities in epitaxial films are lower than those reported in polycrystalline layers. High quality silicon films can be grown on the silicides to form semiconductor/metal/semiconductor heterostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 10: Symposium C – Thin Films and Interfaces I , 1981 , 79
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1 Tu, K. N. and Mayer, J. W., in Poate, J. M., Tu, K. N. and Mayer, J. W. (eds.), Thin Films-Interdiffusion and Reactions, Wiley, New York, 1978.Google Scholar
2 Ottaviani, G., J. Vac. Sci. Technol., 16 (1979) 1112.Google Scholar
3 Murarka, S. P., J. Vac. Sci. Technol., 17 (1980) 775.Google Scholar
4 Walser, R. M. and Bene, R. W., Appl. Phys. Lett., 28 (1976) 624.CrossRefGoogle Scholar
5 Tsaur, B. Y., Lau, S. S., Mayer, J. W. and Nicolet, M.-A., Appl. Phys. Lett., 38 (1981) 922.Google Scholar
6 Andrews, J. M. and Phillips, J. C., Phys. Rev. Lett., 35 (1975) 56.CrossRefGoogle Scholar
7 Ottaviani, G., Tu, K. N. and Mayer, J. W., Phys. Rev. Lett., 44 (1980) 284.CrossRefGoogle Scholar
8 Buckley, W. D. and Moss, S. C., Solid-State Electron., 15 (1972) 1331.Google Scholar
9 Tu, K. N., Appl. Phys. Lett., 27 (1975) 221.CrossRefGoogle Scholar
10 Tung, R. T., Bean, J. C., Gibson, J. M., Poate, J. M. and Jacobson, D. C., Appl. Phys. Lett., 40 (1982) 684.CrossRefGoogle Scholar
11 Bean, J. C. and Poate, J. M., Appl. Phys. Lett., 37 (1980) 643.Google Scholar
12 Saitoh, S., Ishiwara, H. and Furukawa, S., Appl. Phys. Lett., 37(1980) 203.Google Scholar
13 Ishiwara, H., Saitoh, S. and Hikosaka, K., Jpn. J. Appl. Phys., 20 (1981) 843.Google Scholar
14 Kawamura, T., Shinoda, D. and Muta, H., Appl. Phys. Lett., 11 (1967) 101.Google Scholar
15 Sinha, A. K., Marcus, R. B., Sheng, T. T. and Haszko, S. E., J. Appl. Phys., 43 (1972) 3637.CrossRefGoogle Scholar
16 Ishiwara, H., Hikosaka, K. and Furukawa, S., J. Appl. Phys., 50 (1979) 5302.Google Scholar
17 Bower, R. W., Sigurd, D. and Scott, R. E., Solid-State Electron., 16 (1973) 1461.Google Scholar
18 Hutchins, G. A. and Shepela, A., Thin Solid Films, 18 (1973) 313.Google Scholar
19 Ishiwara, H., Hikosaka, K., Nagatomo, M. and Furukawa, S., Surf Sci., 86 (1979) 711.CrossRefGoogle Scholar
20 Saitoh, S., Ishiwara, H., Asano, T. and Furukawa, S., Jpn. J. Appl. Phys., 22 (1981) 1118.Google Scholar
21 Chiu, K. C. R., Poate, J. M., Feldman, L. C. and Doherty, C. J., in Baglin, J. E. E. and Poate, J. M. (eds.), Thin Film Interfaces and Interactions, Electrochemical Society, Princeton, NJ, 1980, p. 171.Google Scholar
22 Tu, K. N., Alessandrini, E. I., Chu, W. K., Krautle, H. and Mayer, J. W., Jpn. J. Appl. Phys., Suppl. 2, Part 1 (1974) 669.Google Scholar
23 Chiu, K.C. R., Poate, J. M., Rowe, J. E., Sheng, T. T. and Cullis, A. G., Appl. Phys. Lett., 38 (1981) 988.CrossRefGoogle Scholar
24 Sigurd, D., Bower, R. W., Van Der Weg, W. F. and Mayer, J. W., Thin Solid Films, 19 (1973) 319.Google Scholar
25 Ishiwara, H. and Furukawa, S., J. Appl. Phys., 47(1976) 1686.Google Scholar
26 Ishiwara, H., Nagatomo, M. and Furukawa, S., Nucl. Instrum. Methods, 149 (1978) 417.CrossRefGoogle Scholar
27 Ishiwara, H. and Kuzuta, N., Appl. Phys. Lett., 37 (1980) 641.Google Scholar
28 Ishiwara, H., in Baglin, J. E. E. and Poate, J. M. (eds.), Thin Film Interfaces and Interactions, Electrochemical Society, Princeton, NJ, 1980.Google Scholar
29 R., K. C., Chiu, and Poate, J. M., unpublished results, 1980.Google Scholar
30 Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Inst. Phys. Conf. Ser. 60 (1981) 415.Google Scholar
31 Bean, J. C. and Sadowski, E. A., J. Vac. Sci. Technol., 20 (1982) 137.CrossRefGoogle Scholar
32 Crider, C. A., Poate, J. M. and Rowe, J. E., in Baglin, J. E. E. and Poate, J. M. (eds.), Thin Film Interfaces and Interactions, Electrochemical Society, Princeton, NJ, 1980, p. 135.Google Scholar
33 Gibson, J. M., Bean, J. C., Poate, J. M. and Tung, R. T., Thin Solid Films, 93(1982)99.Google Scholar
34 Bean, J. C., to be published.Google Scholar
35 Saitoh, S., Ishiwara, H. and Furukawa, S., Jpn. J. Appl. Phys., Suppl., 20 (1981) 49.CrossRefGoogle Scholar